2SA859 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA859
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO92
2SA859 Transistor Equivalent Substitute - Cross-Reference Search
2SA859 Datasheet (PDF)
2sa854s.pdf
2SA854S Transistors Medium Power Transistor (-32V, -0.5A) 2SA854S External dimensions (Unit : mm) Features 1) Large IC. ICMAX. = -500mA 2SA854S2) Low VCE(sat). Idea for low-voltage operation. 4 0.2 2 0.23) Complements the 2SC1741S. Structure 0.150.45+ 0.05-Epitaxial planar type PNP silicon transistor 0.40.45+ 0.152.5+ 0.1 0.5 - 0.05 -5
2sa1036k 2sa1577 2sa854s 2sa854 2sa1036k 2sa1577.pdf
TransistorsMedium Power Transistor(*32V, *0.5A)2SA1036K / 2SA1577 / 2SA854SFFeatures FExternal dimensions (Units: mm)1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltageoperation.3) Complements the 2SC2411K /2SC1741S / 2SC4097.FStructureEpitaxial planar typePNP silicon transistor(96-86-B11)204Transistors 2SA1036K / 2SA1577 / 2SA854SFAbsolute maxim
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
