2SA917 Specs and Replacement
Type Designator: 2SA917
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 70 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO92
- BJT ⓘ Cross-Reference Search
2SA917 datasheet
9.5. Size:105K jmnic
2sa914.pdf 
Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA914 DESCRIPTION With TO-126 package Complement to type 2SC1953 Good linearity of hFE High VCEO APPLICATIONS For audio frequency power pre-amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL PARAMETER CON... See More ⇒
9.6. Size:125K jmnic
2sa913 2sa913a.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA913 2SA913A DESCRIPTION With TO-220 package Complement to type 2SC1913/1913A Large collector power dissipation High VCEO APPLICATIONS Audio frequency high power driver PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and sy... See More ⇒
9.7. Size:177K inchange semiconductor
2sa914.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA914 DESCRIPTION With TO-126 package Complement to type 2SC1953 Good linearity of hFE High VCEO APPLICATIONS For audio frequency power pre-amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL PARAM... See More ⇒
9.8. Size:205K inchange semiconductor
2sa913.pdf
isc Silicon PNP Power Transistor 2SA913 DESCRIPTION Collector-Emitter Breakdown Voltage V = -150V(Min) (BR)CEO Complement to Type 2SC1913 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF high power dirver applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -1... See More ⇒
9.9. Size:139K inchange semiconductor
2sa913 2sa913a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA913 2SA913A DESCRIPTION With TO-220 package Complement to type 2SC1913/1913A Large collector power dissipation High VCEO APPLICATIONS Audio frequency high power driver PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and s... See More ⇒
Detailed specifications: 2SA909, 2SA911, 2SA912, 2SA913, 2SA913A, 2SA914, 2SA915, 2SA916, A940, 2SA918, 2SA919, 2SA92, 2SA920, 2SA921, 2SA922, 2SA922-1, 2SA922-2
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