2SA938 Datasheet and Replacement

   Type Designator: 2SA938
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Collector Capacitance (Cc): 11 pF
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: TO92

2SA938 Substitution

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2SA938 Datasheet (PDF)

9.1. Size:124K 1
2sa937.pdf pdf_icon

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9.2. Size:103K 1
2sa933 2sa933s.pdf pdf_icon

9.3. Size:141K 1
2sa937ln 2sa937mln.pdf pdf_icon

9.4. Size:125K 1
2sa937m.pdf pdf_icon

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9.5. Size:100K rohm
2sa1037ak 2sa1576a 2sa1774 2sa933as.pdf pdf_icon

TransistorsGeneral Purpose Transistor(*50V, *0.15A)2SA1037AK / 2SA1576A / 2SA1774 / 2SA933ASFFeatures FExternal dimensions (Units: mm)1) Excellent hFE linearity.2) Complements the 2SC2412K /2SC4081 / 2SC4617 / 2SC1740S.FStructureEpitaxial planar typePNP silicon transistor(96-89-A32)198Transistors 2SA1037AK/2SA1576A/2SA1774/2SA933ASFAbsolute maximum ratings (Ta = 25_

9.6. Size:168K rohm
2sa1037ak 2sa1576a 2sa1774 2sa2029 2sa933as.pdf pdf_icon

General Purpose Transistor (50V, 0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS Features Dimensions (Unit : mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. 1.251.62.1Structure 2.8Epitaxial planar type. PNP silicon transistor 0.1 to 0.40.3 to 0.6Each lead has same dime

9.7. Size:555K jiangsu
2sa933as.pdf pdf_icon

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO-92S 2SA933AS TRANSISTOR (PNP)1. EMITTER FEATURES 2. COLLECTORExcellent hFE Linearity3. BASE Equivalent Circuit A933ASA933AS=Device code Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING INFORMATION Part Number Packa

9.8. Size:116K transys
2sa935.pdf pdf_icon

Transys ElectronicsL I M I T E D TO-92L Plastic-Encapsulated TransistorsTO-92L 2SA935 TRANSISTOR (PNP) 1. EMITTER FEATURES Power dissipation 2. COLLECTOR PCM : 0.75 W (Tamb=25) 3. BASE Collector current ICM : -0.7 A Collector-base voltage V(BR)CBO : -80 V 1 2 3 Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTR

9.9. Size:171K lge
2sa933as.pdf pdf_icon

2SA933AS TO-92S Transistor (PNP) 1. EMITTER TO-92S 2. COLLECTOR 1 2 3 3. BASE Features Excellent hFE linearity MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol ParameterValue UnitsVCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -150 mA PC Collector Power dissipation 300

9.10. Size:487K blue-rocket-elect
2sa933a.pdf pdf_icon

2SA933A(BR3CG933AK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features 2SC1740(BR3DG1740K) Excellent hFE linearity, complementary pair with 2SC1740(BR3DG1740K). / Applications General purpose applications.

9.11. Size:118K wej
2sa933as.pdf pdf_icon

RoHS 2SA933AS 2SA933AS TRANSISTOR (PNP) TO-92S 1. EMITTER FEATURES 2. COLLECTOR Power dissipation 3. BASE PCM : 0.2 W (Tamb=25) Collector current 123 I CM : -0.15 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specif

Datasheet: 2SA933S , 2SA934 , 2SA935 , 2SA936 , 2SA937 , 2SA937LN , 2SA937M , 2SA937MLN , D667 , 2SA939 , 2SA94 , 2SA940 , 2SA941 , 2SA942 , 2SA949 , 2SA949O , 2SA949Y .