2SA956H3 Datasheet, Equivalent, Cross Reference Search

2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA950 Audio Power Amplifier Applications Unit: mm High hFE: h = 100~320 FE 1 W output applications Complementary to 2SC2120 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -35 VCollector-emitter voltage VCEO -30 VEmitter-base voltage VEBO

MCCTM Micro Commercial Components2SA950-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA950-YPhone: (818) 701-4933Fax: (818) 701-4939Features Complementary Pair With 2SC2120 Epoxy meets UL 94 V-0 flammability ratingPNP Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates TransistorsRoHS Compliant.

2SA950 -0.8A , -35V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES 1W output applications G H Complementary to 2SC2120 EmitterCollectorBase JCLASSIFICATION OF hFE (1) A DMillimeterREF. Min. Max.Product-Rank 2SA950-O 2SA950-YA 4.40 4.70

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors2SA950 TRANSISTOR (PNP)TO-92 FEATURES 1W Output Applications1.EMITTER Complementary to 2SC21202. COLLECTOR3. BASE Equivalent Circuit A950=Device code Solid dot=Green molding compound device, if none,the normal deviceXXX=Code

JMnic Product Specification Silicon PNP Power Transistors 2SA959 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS For high power audio ,stepping motor and other linear applications Relay or solenoid drviers DC-DC converters inverters PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 Coll

JMnic Product Specification Silicon PNP Power Transistors 2SA957 2SA958 DESCRIPTION With TO-220 package High breakdown voltage High power dissipation APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratings(Ta=25) SY

2SA950(PNP)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features 1W output applications complementary to 2SC2120 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters)IC Collecto

2SA953M(BR3CG953M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features ,h ,V FE CEOHigh total power dissipation, high hFE and high VCEO. / Applications Audio frequency amplifier and d

isc Silicon PNP Power Transistor 2SA959DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min.)(BR)CEOHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -100 VC

isc Silicon PNP Power Transistor 2SA957DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -150V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -150 VCB

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA957 2SA958 DESCRIPTION With TO-220 package High breakdown voltage High power dissipation APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratin

isc Silicon PNP Power Transistor 2SA958DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -200V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -200 VCBOV Collector-Emitter Volt