2SA956H3 datasheet, аналоги, основные параметры
Наименование производителя: 2SA956H3 📄📄
Маркировка: H3
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 8 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 280 MHz
Ёмкость коллекторного перехода (Cc): 13 pf
Статический коэффициент передачи тока (hFE): 80
Корпус транзистора: TO236
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Аналоги (замена) для 2SA956H3
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2SA956H3 даташит
9.1. Size:192K toshiba
2sa950.pdf 
2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA950 Audio Power Amplifier Applications Unit mm High hFE h = 100 320 FE 1 W output applications Complementary to 2SC2120 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO
9.5. Size:256K mcc
2sa950-o-y.pdf 
MCC TM Micro Commercial Components 2SA950-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA950-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Complementary Pair With 2SC2120 Epoxy meets UL 94 V-0 flammability rating PNP Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates Transistors RoHS Compliant.
9.7. Size:338K secos
2sa950.pdf 
2SA950 -0.8A , -35V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES 1W output applications G H Complementary to 2SC2120 Emitter Collector Base J CLASSIFICATION OF hFE (1) A D Millimeter REF. Min. Max. Product-Rank 2SA950-O 2SA950-Y A 4.40 4.70
9.8. Size:500K jiangsu
2sa950.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA950 TRANSISTOR (PNP) TO-92 FEATURES 1W Output Applications 1.EMITTER Complementary to 2SC2120 2. COLLECTOR 3. BASE Equivalent Circuit A950=Device code Solid dot=Green molding compound device, if none,the normal device XXX=Code
9.9. Size:149K jmnic
2sa959.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA959 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS For high power audio ,stepping motor and other linear applications Relay or solenoid drviers DC-DC converters inverters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Coll
9.10. Size:152K jmnic
2sa957 2sa958.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA957 2SA958 DESCRIPTION With TO-220 package High breakdown voltage High power dissipation APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SY
9.11. Size:188K lge
2sa950.pdf 
2SA950(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features 1W output applications complementary to 2SC2120 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters) IC Collecto
9.12. Size:809K blue-rocket-elect
2sa953m.pdf 
2SA953M(BR3CG953M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features ,h ,V FE CEO High total power dissipation, high hFE and high VCEO. / Applications Audio frequency amplifier and d
9.13. Size:193K inchange semiconductor
2sa959.pdf 
isc Silicon PNP Power Transistor 2SA959 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min.) (BR)CEO High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -100 V C
9.14. Size:199K inchange semiconductor
2sa957.pdf 
isc Silicon PNP Power Transistor 2SA957 DESCRIPTION Collector-Emitter Breakdown Voltage V = -150V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -150 V CB
9.15. Size:126K inchange semiconductor
2sa957 2sa958.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA957 2SA958 DESCRIPTION With TO-220 package High breakdown voltage High power dissipation APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratin
9.16. Size:199K inchange semiconductor
2sa958.pdf 
isc Silicon PNP Power Transistor 2SA958 DESCRIPTION Collector-Emitter Breakdown Voltage V = -200V(Min) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -200 V CBO V Collector-Emitter Volt
Другие транзисторы: 2SA950, 2SA950O, 2SA950Y, 2SA951, 2SA952, 2SA953, 2SA954, 2SA956, BC547, 2SA956H4, 2SA956H5, 2SA956H6, 2SA957, 2SA958, 2SA959, 2SA96, 2SA962
