All Transistors. 2SA966 Datasheet

 

2SA966 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA966
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.9 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 120 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO92

 2SA966 Transistor Equivalent Substitute - Cross-Reference Search

   

2SA966 Datasheet (PDF)

 ..1. Size:178K  toshiba
2sa966.pdf

2SA966
2SA966

 ..2. Size:434K  jiangsu
2sa966.pdf

2SA966
2SA966

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate TransistorsTO-92L 2SA966 TRANSISTOR (PNP)1. EMITTER FEATURE Complementary to 2SC2236 and 3 Watts Output Applications. 2. COLLECTOR3. BASE Equivalent Circuit A966=Device code A 9 6 6Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING INFOR

 ..3. Size:189K  lge
2sa966.pdf

2SA966
2SA966

2SA966TO-92L Transistor (PNP)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.70015.100Features Complementary to 2SC2236 and 3 Watts output Applications. 7.8008.200MAXIMUM RATINGS (TA=25 unless otherwise noted ) 0.6000.800Symbol Parameter Value UnitsVCBO Collector-Base Voltage -30 V 0.3500.550VCEO Collector-Emitter Voltage -30 V 13.80014.200VEB

 ..4. Size:193K  lge
2sa966 to-92mod.pdf

2SA966
2SA966

2SA966 TO-92MOD Transistor (PNP)1. EMITTER TO-92MOD1 2. COLLECTOR 2 3 3. BASE 5.800Features 6.200 Complementary to 2SC2236 and 8.4008.8003 Watts output Applications. 0.9001.100MAXIMUM RATINGS (TA=25 unless otherwise noted ) 0.4000.600Symbol Parameter Value Units13.800VCBO Collector-Base Voltage -30 V 14.200VCEO Collector-Emitter Voltage -30

 0.1. Size:947K  blue-rocket-elect
2sa966t.pdf

2SA966
2SA966

2SA966T(BR3CG966T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features 2SC2236T(BR3DG2236T)Complementary to 2SC2236T(BR3DG2236T). / Applications AF power amplifier applications. / Equivalent Circu

 9.1. Size:173K  toshiba
2sa965.pdf

2SA966
2SA966

 9.2. Size:109K  panasonic
2sa963.pdf

2SA966
2SA966

 9.3. Size:139K  no
2sa968.pdf

2SA966
2SA966

 9.4. Size:78K  secos
2sa965tm.pdf

2SA966

2SA965TM -0.8A , -120V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92MOD FEATURES Complementary to 2SC2235 A D Power Amplifier Applications BCLASSIFICATION OF hFE Product-Rank 2SA965-O 2SA965-Y KE FRange 80-160 120-240 CNG H1 Emitter 1112 Collector 2

 9.5. Size:160K  jmnic
2sa968 2sa968a 2sa968b.pdf

2SA966
2SA966

JMnic Product Specification Silicon PNP Power Transistors 2SA968 2SA968A 2SA968B DESCRIPTION With TO-220 package Complement to type 2SC2238 High breakdown votage APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol

 9.6. Size:190K  jmnic
2sa963.pdf

2SA966
2SA966

JMnic Product SpecificationSilicon PNP Power Transistors 2SA963 DESCRIPTION With TO-126 package Complement to type 2SC2209 High collector power dissipation APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE

 9.7. Size:162K  jmnic
2sa969.pdf

2SA966
2SA966

JMnic Product Specification Silicon PNP Power Transistors 2SA969 DESCRIPTION With TO-66 package Complement to type 2SC2239 High breakdown votage APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING(See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAbsolute maximum ratings(Ta=2

 9.8. Size:205K  inchange semiconductor
2sa968.pdf

2SA966
2SA966

isc Silicon PNP Power Transistor 2SA968DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2238Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

 9.9. Size:91K  inchange semiconductor
2sa968 2sa968a2sa968b.pdf

2SA966
2SA966

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA968 2SA968A 2SA968B DESCRIPTION With TO-220 package Complement to type 2SC2238 High breakdown votage APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO

 9.10. Size:213K  inchange semiconductor
2sa965.pdf

2SA966
2SA966

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA965DESCRIPTIONPower amplifier applicationsDriver stage amplifier applicationsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switching and amplificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -120 VCB

 9.11. Size:203K  inchange semiconductor
2sa968b.pdf

2SA966
2SA966

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA968BDESCRIPTIONCollector-Emitter Breakdown Voltage: V = -200V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2238BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATIN

 9.12. Size:202K  inchange semiconductor
2sa968 2sa968a 2sa968b.pdf

2SA966
2SA966

isc Silicon PNP Power Transistor 2SA968 A BDESCRIPTIONWith TO-220 packagingComplement to Type 2SC2238 A BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElectronic ignitionAlternator regulatorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT2SA968 -160V Collector-Base Voltage 2SA

 9.13. Size:178K  inchange semiconductor
2sa963.pdf

2SA966
2SA966

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA963 DESCRIPTION With TO-126 package Complement to type 2SC2209 High collector power dissipation APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL PARAMETER

 9.14. Size:199K  inchange semiconductor
2sa969.pdf

2SA966
2SA966

isc Silicon PNP Power Transistor 2SA969DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2239Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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