2SA968 Datasheet and Replacement

JMnic Product Specification Silicon PNP Power Transistors 2SA968 2SA968A 2SA968B DESCRIPTION With TO-220 package Complement to type 2SC2238 High breakdown votage APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol

isc Silicon PNP Power Transistor 2SA968DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2238Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA968 2SA968A 2SA968B DESCRIPTION With TO-220 package Complement to type 2SC2238 High breakdown votage APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO

isc Silicon PNP Power Transistor 2SA968 A BDESCRIPTIONWith TO-220 packagingComplement to Type 2SC2238 A BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElectronic ignitionAlternator regulatorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT2SA968 -160V Collector-Base Voltage 2SA

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA968BDESCRIPTIONCollector-Emitter Breakdown Voltage: V = -200V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2238BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATIN

2SA965TM -0.8A , -120V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92MOD FEATURES Complementary to 2SC2235 A D Power Amplifier Applications BCLASSIFICATION OF hFE Product-Rank 2SA965-O 2SA965-Y KE FRange 80-160 120-240 CNG H1 Emitter 1112 Collector 2

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate TransistorsTO-92L 2SA966 TRANSISTOR (PNP)1. EMITTER FEATURE Complementary to 2SC2236 and 3 Watts Output Applications. 2. COLLECTOR3. BASE Equivalent Circuit A966=Device code A 9 6 6Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING INFOR

JMnic Product SpecificationSilicon PNP Power Transistors 2SA963 DESCRIPTION With TO-126 package Complement to type 2SC2209 High collector power dissipation APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE

JMnic Product Specification Silicon PNP Power Transistors 2SA969 DESCRIPTION With TO-66 package Complement to type 2SC2239 High breakdown votage APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING(See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAbsolute maximum ratings(Ta=2

2SA966TO-92L Transistor (PNP)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.70015.100Features Complementary to 2SC2236 and 3 Watts output Applications. 7.8008.200MAXIMUM RATINGS (TA=25 unless otherwise noted ) 0.6000.800Symbol Parameter Value UnitsVCBO Collector-Base Voltage -30 V 0.3500.550VCEO Collector-Emitter Voltage -30 V 13.80014.200VEB

2SA966 TO-92MOD Transistor (PNP)1. EMITTER TO-92MOD1 2. COLLECTOR 2 3 3. BASE 5.800Features 6.200 Complementary to 2SC2236 and 8.4008.8003 Watts output Applications. 0.9001.100MAXIMUM RATINGS (TA=25 unless otherwise noted ) 0.4000.600Symbol Parameter Value Units13.800VCBO Collector-Base Voltage -30 V 14.200VCEO Collector-Emitter Voltage -30

2SA966T(BR3CG966T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features 2SC2236T(BR3DG2236T)Complementary to 2SC2236T(BR3DG2236T). / Applications AF power amplifier applications. / Equivalent Circu

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA965DESCRIPTIONPower amplifier applicationsDriver stage amplifier applicationsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switching and amplificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -120 VCB

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA963 DESCRIPTION With TO-126 package Complement to type 2SC2209 High collector power dissipation APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL PARAMETER

isc Silicon PNP Power Transistor 2SA969DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2239Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA