All Transistors. 2SA979 Datasheet

 

2SA979 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA979
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 2.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 250
   Noise Figure, dB: -
   Package: TO71-2

 2SA979 Transistor Equivalent Substitute - Cross-Reference Search

   

2SA979 Datasheet (PDF)

 ..1. Size:55K  no
2sa979.pdf

2SA979

 9.1. Size:321K  toshiba
2sa970.pdf

2SA979
2SA979

2SA970 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA970 Low Noise Audio Amplifier Applications Unit: mm Low noise: NF = 3dB (typ.) RG = 100 , V = -6 V, I = -100 A, CE C f = 1 kHz : NF = 0.5dB (typ.) R = 1 k, V = -6 V, I = -100 A, G CE C f = 1 kHz High DC current gain: h = 200~700 FE High breakdown voltage: V = -120 V CEO

 9.2. Size:148K  jmnic
2sa971.pdf

2SA979
2SA979

JMnic Product Specification Silicon PNP Power Transistors 2SA971 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS For high power audio ,stepping motor and other linear applications Relay or solenoid drviers DC-DC converters inverters PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 Coll

 9.3. Size:537K  jilin sino
2sa970.pdf

2SA979
2SA979

PNP PNP Epitaxial Silicon Transistor R2SA970 (PNP) APPLICATIONS Low noise audio amplifier applications FEATURES V =-120V (min) High collector voltageV =-120V (min) CEO CEO 2SC2240 Complementary 2SC2240 High DC current gain

 9.4. Size:971K  blue-rocket-elect
2sa970.pdf

2SA979
2SA979

2SA970 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features ,,Low noise, high DC current gain, high breakdown voltage. / Applications Low noise audio amplifier applications.

 9.5. Size:192K  inchange semiconductor
2sa971.pdf

2SA979
2SA979

isc Silicon PNP Power Transistor 2SA971DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -150 VC

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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