2SA979 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2SA979 Specs and Replacement

Type Designator: 2SA979

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 2.5 pF

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: -

Package: TO71-2

2SA979 Substitution

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2SA979 datasheet

..1. Size:55K no

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9.1. Size:321K toshiba

2sa970.pdf pdf_icon

2SA970 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA970 Low Noise Audio Amplifier Applications Unit mm Low noise NF = 3dB (typ.) RG = 100 , V = -6 V, I = -100 A, CE C f = 1 kHz NF = 0.5dB (typ.) R = 1 k , V = -6 V, I = -100 A, G CE C f = 1 kHz High DC current gain h = 200 700 FE High breakdown voltage V = -120 V CEO ... See More ⇒

9.2. Size:148K jmnic

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JMnic Product Specification Silicon PNP Power Transistors 2SA971 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS For high power audio ,stepping motor and other linear applications Relay or solenoid drviers DC-DC converters inverters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Coll... See More ⇒

9.3. Size:537K jilin sino

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