2SA979 Todos los transistores

2SA970 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA970 Low Noise Audio Amplifier Applications Unit mm Low noise NF = 3dB (typ.) RG = 100 , V = -6 V, I = -100 A, CE C f = 1 kHz NF = 0.5dB (typ.) R = 1 k , V = -6 V, I = -100 A, G CE C f = 1 kHz High DC current gain h = 200 700 FE High breakdown voltage V = -120 V CEO

JMnic Product Specification Silicon PNP Power Transistors 2SA971 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS For high power audio ,stepping motor and other linear applications Relay or solenoid drviers DC-DC converters inverters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Coll

2SA970 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features , , Low noise, high DC current gain, high breakdown voltage. / Applications Low noise audio amplifier applications.

isc Silicon PNP Power Transistor 2SA971 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min.) (BR)CEO High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -150 V C