2SA987 Datasheet and Replacement

   Type Designator: 2SA987
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 90 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 400
   Noise Figure, dB: -
   Package: TO92

2SA987 Substitution

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2SA987 Datasheet (PDF)

9.1. Size:120K nec
2sa988.pdf pdf_icon

9.2. Size:42K no
2sa984.pdf pdf_icon

9.3. Size:39K no
2sa980.pdf pdf_icon

9.4. Size:70K wingshing
2sa985.pdf pdf_icon

2SA985 PNP EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SC2275ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -120 V Emitter-Base voltage VEBO -7 V Collector Current (DC) IC -1.5 A Collector Dissipation (Tc=25 PC 25 W

9.5. Size:65K wingshing
2sa986a.pdf pdf_icon

2SA986A PNP EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage VCEO -180 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 10 W Junction Temperature Tj

9.6. Size:160K jmnic
2sa985 2sa985a.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA985 2SA985A DESCRIPTION With TO-220 package Complement to type 2SC2275/2275A High breakdown voltage APPLICATIONS For low frequency and high frequency power amplifer applicatons PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3

9.7. Size:151K jmnic
2sa980 2sa981 2sa982.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA980/981/982 DESCRIPTION With TO-3 package Complement to type 2SC2260/2261/2262 APPLICATIONS For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CO

9.8. Size:207K inchange semiconductor
2sa985.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA985DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2275Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applicationsHigh frequency power amplifier applicationsABSOLUTE MAXIMUM RATINGS

9.9. Size:194K inchange semiconductor
2sa981.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA981DESCRIPTIONHigh Power Dissipation-: P = 80W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOComplement to Type 2SC2261Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS

9.10. Size:131K inchange semiconductor
2sa980 2sa981 2sa982.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA980/981/982 DESCRIPTION With TO-3 package Complement to type 2SC2260/2261/2262 APPLICATIONS For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SY

9.11. Size:91K inchange semiconductor
2sa985-a.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA985 2SA985A DESCRIPTION With TO-220 package Complement to type 2SC2275/2275A High breakdown voltage APPLICATIONS For low frequency and high frequency power amplifer applicatons PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-22

9.12. Size:194K inchange semiconductor
2sa982.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA982DESCRIPTIONHigh Power Dissipation-: P = 80W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -140V(Min.)(BR)CEOComplement to Type 2SC2262Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS

9.13. Size:194K inchange semiconductor
2sa980.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA980DESCRIPTIONHigh Power Dissipation-: P = 80W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -100V(Min.)(BR)CEOComplement to Type 2SC2260Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS

Datasheet: 2SA984F , 2SA984K , 2SA984KD , 2SA984KE , 2SA984KF , 2SA985 , 2SA985A , 2SA986 , 2SD2499 , 2SA988 , 2SA989 , 2SA99 , 2SA990 , 2SA991 , 2SA992 , 2SA993 , 2SA994 .

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BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550

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2SA987 Datasheet and Replacement

2SA987 Datasheet (PDF)

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