2SA987 Todos los transistores

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2SA987 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA987

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 90 MHz

Capacitancia de salida (Cc): 10 pF

Ganancia de corriente contínua (hfe): 400

Empaquetado / Estuche: TO92

Búsqueda de reemplazo de transistor bipolar 2SA987

 

2SA987 Datasheet (PDF)

5.1. 2sa988.pdf Size:120K _nec

2SA987
2SA987

5.2. 2sa980.pdf Size:39K _no

2SA987

5.3. 2sa984.pdf Size:42K _no

2SA987

5.4. 2sa986a.pdf Size:65K _wingshing

2SA987

2SA986A PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage VCEO -180 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25? PC 10 W ? ? ? Junction Temperature Tj 150 ? ? ? ? S

5.5. 2sa985.pdf Size:70K _wingshing

2SA987

2SA985 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SC2275 ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -120 V Emitter-Base voltage VEBO -7 V Collector Current (DC) IC -1.5 A Collector Dissipation (Tc=25? PC 25 W ? ? ? Junction Temperatu

5.6. 2sa980 2sa981 2sa982.pdf Size:151K _jmnic

2SA987
2SA987

JMnic Product Specification Silicon PNP Power Transistors 2SA980/981/982 DESCRIPTION ·With TO-3 package ·Complement to type 2SC2260/2261/2262 APPLICATIONS ·For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITI

5.7. 2sa985 2sa985a.pdf Size:160K _jmnic

2SA987
2SA987

JMnic Product Specification Silicon PNP Power Transistors 2SA985 2SA985A DESCRIPTION ·With TO-220 package ·Complement to type 2SC2275/2275A ·High breakdown voltage APPLICATIONS ·For low frequency and high frequency power amplifer applicatons PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Bas

5.8. 2sa981.pdf Size:49K _inchange_semiconductor

2SA987
2SA987

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA981 DESCRIPTION ·High Power Dissipation- : PC= 80W(Max.)@TC=25? ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Complement to Type 2SC2261 APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-

5.9. 2sa980 981 982.pdf Size:131K _inchange_semiconductor

2SA987
2SA987

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA980/981/982 DESCRIPTION ·With TO-3 package ·Complement to type 2SC2260/2261/2262 APPLICATIONS ·For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL

5.10. 2sa982.pdf Size:49K _inchange_semiconductor

2SA987
2SA987

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA982 DESCRIPTION ·High Power Dissipation- : PC= 80W(Max.)@TC=25? ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min.) ·Complement to Type 2SC2262 APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-

5.11. 2sa985-a.pdf Size:91K _inchange_semiconductor

2SA987
2SA987

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA985 2SA985A DESCRIPTION ·With TO-220 package ·Complement to type 2SC2275/2275A ·High breakdown voltage APPLICATIONS ·For low frequency and high frequency power amplifer applicatons PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220)

5.12. 2sa985.pdf Size:108K _inchange_semiconductor

2SA987
2SA987

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA985 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2275 APPLICATIONS ·Audio frequency power amplifier applications ·High frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE U

Otros transistores... 2SA984F , 2SA984K , 2SA984KD , 2SA984KE , 2SA984KF , 2SA985 , 2SA985A , 2SA986 , TIP31C , 2SA988 , 2SA989 , 2SA99 , 2SA990 , 2SA991 , 2SA992 , 2SA993 , 2SA994 .

 


2SA987
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Introduzca al menos 1 números o letras