2SB1017R Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB1017R
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 9 MHz
Collector Capacitance (Cc): 130 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO220
2SB1017R Transistor Equivalent Substitute - Cross-Reference Search
2SB1017R Datasheet (PDF)
2sb1017.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SB1017 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SB1017 is a PNP silicon epitaxial transistor suited to be used in power amplifier applications. FEATURES * Low base drive ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 32SB1017L-
2sb1017.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1017 DESCRIPTION With TO-220Fa package Complement to type 2SD1408 APPLICATIONS For power amplifications Recommended for 20-25W high-fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VAL
2sb1017.pdf
isc Silicon PNP Power Transistor 2SB1017DESCRIPTIONLow Collector Saturation Voltage-: V = -1.7V(Max)@I = -3ACE(sat) CGood Linearity of hFEComplement to Type 2SD1408Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Recommended for 20~25W high-fidelity audio frequencyamplifie
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
