2SB1017Y Specs and Replacement
Type Designator: 2SB1017Y
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 9 MHz
Collector Capacitance (Cc): 130 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: TO220
2SB1017Y Substitution
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2SB1017Y datasheet
UNISONIC TECHNOLOGIES CO., LTD 2SB1017 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SB1017 is a PNP silicon epitaxial transistor suited to be used in power amplifier applications. FEATURES * Low base drive ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB1017L-... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1017 DESCRIPTION With TO-220Fa package Complement to type 2SD1408 APPLICATIONS For power amplifications Recommended for 20-25W high-fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VAL... See More ⇒
isc Silicon PNP Power Transistor 2SB1017 DESCRIPTION Low Collector Saturation Voltage- V = -1.7V(Max)@I = -3A CE(sat) C Good Linearity of h FE Complement to Type 2SD1408 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for 20 25W high-fidelity audio frequency amplifie... See More ⇒
Detailed specifications: 2SB1015Y, 2SB1016, 2SB1016O, 2SB1016R, 2SB1016Y, 2SB1017, 2SB1017O, 2SB1017R, A1015, 2SB1018, 2SB1018O, 2SB1018Y, 2SB1019, 2SB1019O, 2SB1019Y, 2SB102, 2SB1020
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