2SB1017Y Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1017Y
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 9 MHz
Capacitancia de salida (Cc): 130 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: TO220
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2SB1017Y PDF detailed specifications
2sb1017.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SB1017 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SB1017 is a PNP silicon epitaxial transistor suited to be used in power amplifier applications. FEATURES * Low base drive ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB1017L-... See More ⇒
2sb1017.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1017 DESCRIPTION With TO-220Fa package Complement to type 2SD1408 APPLICATIONS For power amplifications Recommended for 20-25W high-fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VAL... See More ⇒
2sb1017.pdf
isc Silicon PNP Power Transistor 2SB1017 DESCRIPTION Low Collector Saturation Voltage- V = -1.7V(Max)@I = -3A CE(sat) C Good Linearity of h FE Complement to Type 2SD1408 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for 20 25W high-fidelity audio frequency amplifie... See More ⇒
Otros transistores... 2SB1015Y , 2SB1016 , 2SB1016O , 2SB1016R , 2SB1016Y , 2SB1017 , 2SB1017O , 2SB1017R , A1015 , 2SB1018 , 2SB1018O , 2SB1018Y , 2SB1019 , 2SB1019O , 2SB1019Y , 2SB102 , 2SB1020 .
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