All Transistors. 2SB1021 Datasheet

 

2SB1021 Datasheet and Replacement


   Type Designator: 2SB1021
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 8000
   Noise Figure, dB: -
   Package: TO220
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2SB1021 Datasheet (PDF)

 ..1. Size:47K  no
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2SB1021

 ..2. Size:145K  jmnic
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2SB1021

JMnic Product Specification Silicon PNP Power Transistors 2SB1021 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage Complement to type 2SD1416 APPLICATIONS High power switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol 3 Emi

 ..3. Size:214K  inchange semiconductor
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2SB1021

isc Silicon PNP Darlingtion Power Transistor 2SB1021DESCRIPTIONHigh DC C urrent Gain-: h = 2000(Min.)@I = -3AFE CLow Collector Saturation Voltage-: V = -1.5V(Max)@I = -3ACE(sat) CGood Linearity of hFEComplement to Type 2SD1416Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.

 8.1. Size:43K  toshiba
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2SB1021

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

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