All Transistors. 2SB1021 Datasheet

 

2SB1021 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SB1021
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 8000
   Noise Figure, dB: -
   Package: TO220

 2SB1021 Transistor Equivalent Substitute - Cross-Reference Search

   

2SB1021 Datasheet (PDF)

 ..1. Size:47K  no
2sb1021.pdf

2SB1021

 ..2. Size:145K  jmnic
2sb1021.pdf

2SB1021
2SB1021

JMnic Product Specification Silicon PNP Power Transistors 2SB1021 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage Complement to type 2SD1416 APPLICATIONS High power switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol 3 Emi

 ..3. Size:214K  inchange semiconductor
2sb1021.pdf

2SB1021
2SB1021

isc Silicon PNP Darlingtion Power Transistor 2SB1021DESCRIPTIONHigh DC C urrent Gain-: h = 2000(Min.)@I = -3AFE CLow Collector Saturation Voltage-: V = -1.5V(Max)@I = -3ACE(sat) CGood Linearity of hFEComplement to Type 2SD1416Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.

 8.1. Size:43K  toshiba
2sb1024.pdf

2SB1021

 8.2. Size:48K  toshiba
2sb1023.pdf

2SB1021

 8.3. Size:152K  toshiba
2sb1020a.pdf

2SB1021
2SB1021

2SB1020A TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington Power) 2SB1020A High-Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive Applications High DC current gain: hFE = 2000 (min) (VCE = -3 V, IC = -3 A) Low saturation voltage: VCE (sat) = -1.5 V (max) (IC = -3 A) Complementary to 2SD1415A Absolute Maximum Ratings (Tc = 25C)

 8.4. Size:80K  renesas
rej03g0662 2sb1026ds-1.pdf

2SB1021
2SB1021

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. Size:79K  renesas
rej03g0661 2sb1025ds-1.pdf

2SB1021
2SB1021

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.6. Size:33K  hitachi
2sb1025.pdf

2SB1021
2SB1021

2SB1025Silicon PNP EpitaxialApplication Low frequency power amplifier Complementary pair with 2SD1418OutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SB1025Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 80 VEmitter to base voltage VEBO 5 V

 8.7. Size:30K  hitachi
2sb1027.pdf

2SB1021
2SB1021

2SB1027Silicon PNP EpitaxialApplicationLow frequency amplifierOutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SB1027Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 180 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 5 VCollector current IC 1.5 ACollector peak

 8.8. Size:31K  hitachi
2sb1028.pdf

2SB1021
2SB1021

2SB1028Silicon PNP EpitaxialApplicationLow frequency power amplifierOutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SB1028Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 180 VCollector to emitter voltage VCEO 160 VEmitter to base voltage VEBO 5 VCollector current IC 1.5 ACollecto

 8.9. Size:25K  hitachi
2sb1026.pdf

2SB1021
2SB1021

2SB1026Silicon PNP EpitaxialApplication Low frequency power amplifier Complementary pair with 2SD1419OutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SB1026Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 100 VEmitter to base voltage VEBO 5 V

 8.10. Size:42K  no
2sb1022.pdf

2SB1021

 8.11. Size:144K  jmnic
2sb1024.pdf

2SB1021
2SB1021

JMnic Product Specification Silicon PNP Power Transistors 2SB1024 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage Complement to type 2SD1414 APPLICATIONS Power amplifier and switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbo

 8.12. Size:145K  jmnic
2sb1023.pdf

2SB1021
2SB1021

JMnic Product Specification Silicon PNP Power Transistors 2SB1023 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage Complement to type 2SD1413 APPLICATIONS Power amplifier and switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbo

 8.13. Size:143K  jmnic
2sb1022.pdf

2SB1021
2SB1021

JMnic Product Specification Silicon PNP Power Transistors 2SB1022 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage Complement to type 2SD1417 APPLICATIONS High power switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol 3 Emi

 8.14. Size:144K  jmnic
2sb1020.pdf

2SB1021
2SB1021

JMnic Product Specification Silicon PNP Power Transistors 2SB1020 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage Complement to type 2SD1415 APPLICATIONS High power switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol 3 Emi

 8.15. Size:923K  kexin
2sb1025.pdf

2SB1021
2SB1021

SMD Type TransistorsPNP Transistors2SB1025 Features 1.70 0.1 Low frequency power amplifier Complementary to 2SD14180.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -80 V Emitter - Base Voltage VEBO -5 Collector Current - Cont

 8.16. Size:862K  kexin
2sb1027.pdf

2SB1021
2SB1021

SMD Type TransistorsPNP Transistors2SB1027 Features1.70 0.1 Low frequency power amplifier0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -1.5A Collector

 8.17. Size:866K  kexin
2sb1028.pdf

2SB1021
2SB1021

SMD Type TransistorsPNP Transistors2SB1028SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-1.5A Collector Emitter Voltage VCEO=-160V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage VCEO -160 V Emitter - Base Vol

 8.18. Size:914K  kexin
2sb1026.pdf

2SB1021
2SB1021

SMD Type TransistorsPNP Transistors2SB1026 Features 1.70 0.1 Low frequency power amplifier Complementary to 2SD14190.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -100 V Emitter - Base Voltage VEBO -5 Collector Current - Con

 8.19. Size:211K  inchange semiconductor
2sb1024.pdf

2SB1021
2SB1021

isc Silicon PNP Darlington Power Transistor 2SB1024DESCRIPTIONLow Collector Saturation Voltage-: V = -1.5V(Max.)@ I = -3ACE(sat) CHigh DC Current Gain-: h = 2000(Min)@ (V = -2V, I = -1A)FE CE CComplement to Type 2SD1414Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUT

 8.20. Size:213K  inchange semiconductor
2sb1023.pdf

2SB1021
2SB1021

isc Silicon PNP Darlingtion Power Transistor 2SB1023DESCRIPTIONHigh DC C urrent Gain-: h = 2000(Min.)@I = -1AFE CLow Collector Saturation Voltage-: V = -1.5V(Max)@I = -2ACE(sat) CGood Linearity of hFEComplement to Type 2SD1413Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applications.Hammer driv

 8.21. Size:213K  inchange semiconductor
2sb1022.pdf

2SB1021
2SB1021

isc Silicon PNP Darlingtion Power Transistor 2SB1022DESCRIPTIONHigh DC C urrent Gain-: h = 2000(Min.)@I = -3AFE CLow Collector Saturation Voltage-: V = -1.5V(Max)@I = -3ACE(sat) CGood Linearity of hFEComplement to Type 2SD1417Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.

 8.22. Size:213K  inchange semiconductor
2sb1020.pdf

2SB1021
2SB1021

isc Silicon PNP Darlingtion Power Transistor 2SB1020DESCRIPTIONHigh DC C urrent Gain-: h = 2000(Min.)@I = -3AFE CLow Collector Saturation Voltage-: V = -1.5V(Max)@I = -3ACE(sat) CGood Linearity of hFEComplement to Type 2SD1415Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.

Datasheet: 2SB1018 , 2SB1018O , 2SB1018Y , 2SB1019 , 2SB1019O , 2SB1019Y , 2SB102 , 2SB1020 , 2SC4793 , 2SB1022 , 2SB1023 , 2SB1024 , 2SB1025 , 2SB1026 , 2SB1027 , 2SB1028 , 2SB1029 .

 

 
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