2SB1021 datasheet, аналоги, основные параметры
Наименование производителя: 2SB1021 📄📄
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 7 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 8000
Корпус транзистора: TO220
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Аналоги (замена) для 2SB1021
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2SB1021 даташит
..2. Size:145K jmnic
2sb1021.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB1021 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage Complement to type 2SD1416 APPLICATIONS High power switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emi
..3. Size:214K inchange semiconductor
2sb1021.pdf 
isc Silicon PNP Darlingtion Power Transistor 2SB1021 DESCRIPTION High DC C urrent Gain- h = 2000(Min.)@I = -3A FE C Low Collector Saturation Voltage- V = -1.5V(Max)@I = -3A CE(sat) C Good Linearity of h FE Complement to Type 2SD1416 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications.
8.3. Size:152K toshiba
2sb1020a.pdf 
2SB1020A TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington Power) 2SB1020A High-Power Switching Applications Unit mm Hammer Drive, Pulse Motor Drive Applications High DC current gain hFE = 2000 (min) (VCE = -3 V, IC = -3 A) Low saturation voltage VCE (sat) = -1.5 V (max) (IC = -3 A) Complementary to 2SD1415A Absolute Maximum Ratings (Tc = 25 C)
8.4. Size:80K renesas
rej03g0662 2sb1026ds-1.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.5. Size:79K renesas
rej03g0661 2sb1025ds-1.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.6. Size:33K hitachi
2sb1025.pdf 
2SB1025 Silicon PNP Epitaxial Application Low frequency power amplifier Complementary pair with 2SD1418 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SB1025 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 V
8.7. Size:30K hitachi
2sb1027.pdf 
2SB1027 Silicon PNP Epitaxial Application Low frequency amplifier Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SB1027 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 180 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 5 V Collector current IC 1.5 A Collector peak
8.8. Size:31K hitachi
2sb1028.pdf 
2SB1028 Silicon PNP Epitaxial Application Low frequency power amplifier Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SB1028 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 180 V Collector to emitter voltage VCEO 160 V Emitter to base voltage VEBO 5 V Collector current IC 1.5 A Collecto
8.9. Size:25K hitachi
2sb1026.pdf 
2SB1026 Silicon PNP Epitaxial Application Low frequency power amplifier Complementary pair with 2SD1419 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SB1026 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 5 V
8.11. Size:144K jmnic
2sb1024.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB1024 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage Complement to type 2SD1414 APPLICATIONS Power amplifier and switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbo
8.12. Size:145K jmnic
2sb1023.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB1023 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage Complement to type 2SD1413 APPLICATIONS Power amplifier and switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbo
8.13. Size:143K jmnic
2sb1022.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB1022 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage Complement to type 2SD1417 APPLICATIONS High power switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emi
8.14. Size:144K jmnic
2sb1020.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB1020 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage Complement to type 2SD1415 APPLICATIONS High power switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emi
8.15. Size:923K kexin
2sb1025.pdf 
SMD Type Transistors PNP Transistors 2SB1025 Features 1.70 0.1 Low frequency power amplifier Complementary to 2SD1418 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -80 V Emitter - Base Voltage VEBO -5 Collector Current - Cont
8.16. Size:862K kexin
2sb1027.pdf 
SMD Type Transistors PNP Transistors 2SB1027 Features 1.70 0.1 Low frequency power amplifier 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -1.5 A Collector
8.17. Size:866K kexin
2sb1028.pdf 
SMD Type Transistors PNP Transistors 2SB1028 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-1.5A Collector Emitter Voltage VCEO=-160V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage VCEO -160 V Emitter - Base Vol
8.18. Size:914K kexin
2sb1026.pdf 
SMD Type Transistors PNP Transistors 2SB1026 Features 1.70 0.1 Low frequency power amplifier Complementary to 2SD1419 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -100 V Emitter - Base Voltage VEBO -5 Collector Current - Con
8.19. Size:211K inchange semiconductor
2sb1024.pdf 
isc Silicon PNP Darlington Power Transistor 2SB1024 DESCRIPTION Low Collector Saturation Voltage- V = -1.5V(Max.)@ I = -3A CE(sat) C High DC Current Gain- h = 2000(Min)@ (V = -2V, I = -1A) FE CE C Complement to Type 2SD1414 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUT
8.20. Size:213K inchange semiconductor
2sb1023.pdf 
isc Silicon PNP Darlingtion Power Transistor 2SB1023 DESCRIPTION High DC C urrent Gain- h = 2000(Min.)@I = -1A FE C Low Collector Saturation Voltage- V = -1.5V(Max)@I = -2A CE(sat) C Good Linearity of h FE Complement to Type 2SD1413 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications. Hammer driv
8.21. Size:213K inchange semiconductor
2sb1022.pdf 
isc Silicon PNP Darlingtion Power Transistor 2SB1022 DESCRIPTION High DC C urrent Gain- h = 2000(Min.)@I = -3A FE C Low Collector Saturation Voltage- V = -1.5V(Max)@I = -3A CE(sat) C Good Linearity of h FE Complement to Type 2SD1417 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications.
8.22. Size:213K inchange semiconductor
2sb1020.pdf 
isc Silicon PNP Darlingtion Power Transistor 2SB1020 DESCRIPTION High DC C urrent Gain- h = 2000(Min.)@I = -3A FE C Low Collector Saturation Voltage- V = -1.5V(Max)@I = -3A CE(sat) C Good Linearity of h FE Complement to Type 2SD1415 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications.
Другие транзисторы: 2SB1018, 2SB1018O, 2SB1018Y, 2SB1019, 2SB1019O, 2SB1019Y, 2SB102, 2SB1020, A1941, 2SB1022, 2SB1023, 2SB1024, 2SB1025, 2SB1026, 2SB1027, 2SB1028, 2SB1029
