2SB1122R Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB1122R
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT89
2SB1122R Transistor Equivalent Substitute - Cross-Reference Search
2SB1122R Datasheet (PDF)
2sb1122.pdf
Ordering number : EN2040B2SB1122 / 2SD1622SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SB1122 / 2SD1622Low-Frequency Power Amplifier ApplicationsApplications Voltage regulators relay drivers, lamp drivers, electrical equipment.Features Adoption of FBET process. Ultrasmall size making it easy to provide high-density hybrid ICs.S
2sb1122.pdf
Ordering number : EN2040C2SB1122Bipolar Transistorhttp://onsemi.com ( )50V, 1A, Low VCE sat PNP Single PCPApplicaitons Voltage regulators relay drivers, lamp drivers, electrical equipmentFeatures Adoption of FBET process Ultrasmall size making it easy to provide high-density hybrid ICsSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol
2sb1122.pdf
SMD Type ICPNP Transistors2SB1122 Features1.70 0.1 Very small size making it easy to provide high highdensity, small-sized hybrid ICs. Complementary to 2SD16220.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
