All Transistors. 2SB1122R Datasheet

 

2SB1122R Datasheet and Replacement


   Type Designator: 2SB1122R
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 12 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT89
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2SB1122R Datasheet (PDF)

 7.1. Size:301K  sanyo
 2sb1122.pdf pdf_icon

2SB1122R

Ordering number : EN2040B2SB1122 / 2SD1622SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SB1122 / 2SD1622Low-Frequency Power Amplifier ApplicationsApplications Voltage regulators relay drivers, lamp drivers, electrical equipment.Features Adoption of FBET process. Ultrasmall size making it easy to provide high-density hybrid ICs.S

 7.2. Size:292K  onsemi
 2sb1122.pdf pdf_icon

2SB1122R

Ordering number : EN2040C2SB1122Bipolar Transistorhttp://onsemi.com ( )50V, 1A, Low VCE sat PNP Single PCPApplicaitons Voltage regulators relay drivers, lamp drivers, electrical equipmentFeatures Adoption of FBET process Ultrasmall size making it easy to provide high-density hybrid ICsSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol

 7.3. Size:1542K  kexin
 2sb1122.pdf pdf_icon

2SB1122R

SMD Type ICPNP Transistors2SB1122 Features1.70 0.1 Very small size making it easy to provide high highdensity, small-sized hybrid ICs. Complementary to 2SD16220.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter

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History: NB323H | ECG186A | DSS5140U | BUV98V | PDTA124XM | 2SC4737 | KT683G

Keywords - 2SB1122R transistor datasheet

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