2N1490 Datasheet, Equivalent, Cross Reference Search

   Type Designator: 2N1490
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 75 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 55 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO3

2N1490 Transistor Equivalent Substitute - Cross-Reference Search

2N1490 Datasheet (PDF)

..1. Size:603K rca
2n1490.pdf

..2. Size:52K microsemi
2n1487 2n1488 2n1489 2n1490.pdf

TECHNICAL DATA NPN SILICON HIGH POWER TRANSISTOR Qualified per MIL-PRF-19500/208 Devices Qualified Level 2N1487 2N1488 2N1489 2N1490 MAXIMUM RATINGS Ratings Symbol 2N1487 2N1488 Unit 2N1498 2N1490 Collector-Emitter Voltage 40 55 Vdc VCEO Collector-Base Voltage 60 100 Vdc VCBO Collector-Emitter Voltage 60 100 Vdc VCEX Emitter-Base Voltage 10 Vdc VEBO Base Current

9.1. Size:544K rca
2n1493.pdf