All Transistors. 2SB1135R Datasheet

 

2SB1135R Datasheet and Replacement


   Type Designator: 2SB1135R
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO220F
 

 2SB1135R Substitution

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2SB1135R Datasheet (PDF)

 7.1. Size:99K  sanyo
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2SB1135R

 7.2. Size:212K  jmnic
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2SB1135R

JMnic Product Specification Silicon PNP Power Transistors 2SB1135 DESCRIPTION With TO-220F package Complement to type 2SD1668 Low collector saturation voltage Wide ASO APPLICATIONS Relay drivers High speed inverters;converters General high current switching application PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-220F) and

 7.3. Size:213K  inchange semiconductor
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2SB1135R

isc Silicon PNP Power Transistor 2SB1135DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -0.4V(Max.)@ I = -4ACE(sat) CComplement to Type 2SD1668Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters, and othergenera

Datasheet: 2SB1133R , 2SB1133S , 2SB1134 , 2SB1134Q , 2SB1134R , 2SB1134S , 2SB1135 , 2SB1135Q , A1015 , 2SB1135S , 2SB1136 , 2SB1136Q , 2SB1136R , 2SB1136S , 2SB1137 , 2SB114 , 2SB1140 .

History: SFT211 | NTE2417 | KTC3003 | 2SB608A | MRF825 | 2SC1623L5-T3 | GD160B

Keywords - 2SB1135R transistor datasheet

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