2SB1136S Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB1136S
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: TO220F
2SB1136S Transistor Equivalent Substitute - Cross-Reference Search
2SB1136S Datasheet (PDF)
2sb1136.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1136 DESCRIPTION With TO-220F package Complement to type 2SD1669 Low collector saturation voltage Wide ASO APPLICATIONS Relay drivers High speed inverters,converters General high current switching applications PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-220F) and
2sb1136.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB1136DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -0.4V(Max.)@ I = -6ACE(sat) CComplement to Type 2SD1669Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers,high-speed inver
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
