2SB1136S pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2SB1136S Specs and Replacement

Type Designator: 2SB1136S

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 140

Noise Figure, dB: -

Package: TO220F

2SB1136S Substitution

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2SB1136S datasheet

7.1. Size:102K sanyo

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7.2. Size:221K jmnic

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JMnic Product Specification Silicon PNP Power Transistors 2SB1136 DESCRIPTION With TO-220F package Complement to type 2SD1669 Low collector saturation voltage Wide ASO APPLICATIONS Relay drivers High speed inverters,converters General high current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-220F) and... See More ⇒

7.3. Size:199K inchange semiconductor

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INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1136 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Low Collector Saturation Voltage- V = -0.4V(Max.)@ I = -6A CE(sat) C Complement to Type 2SD1669 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers,high-speed inver... See More ⇒

Detailed specifications: 2SB1134S, 2SB1135, 2SB1135Q, 2SB1135R, 2SB1135S, 2SB1136, 2SB1136Q, 2SB1136R, TIP122, 2SB1137, 2SB114, 2SB1140, 2SB1140R, 2SB1140S, 2SB1140T, 2SB1141, 2SB1141Q