2SB1171 Datasheet. Specs and Replacement
Type Designator: 2SB1171 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 90
Package: TO218
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2SB1171 Substitution
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2SB1171 datasheet
Power Transistors 2SB1172, 2SB1172A Silicon PNP epitaxial planar type For low-frequency power amplification Unit mm Complementary to 2SD1742, 2SD742A 7.0 0.3 3.5 0.2 3.0 0.2 0 to 0.15 Features 2.0 0.2 High forward current transfer ratio hFE which has satisfactory linearity Low collector-emitter saturation voltage VCE(sat) I type package enabling direct sold... See More ⇒
Power Transistors 2SB1176 Silicon PNP epitaxial planar type For voltage switching Unit mm Complementary to 2SD1746 7.0 0.3 3.5 0.2 3.0 0.2 0 to 0.15 2.0 0.2 Features Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the ra... See More ⇒
Power Transistors 2SB1174 Silicon PNP epitaxial planar type For voltage switching Unit mm 7.0 0.3 3.5 0.2 3.0 0.2 0 to 0.15 Features 2.0 0.2 Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the radiating fin to the printe... See More ⇒
Detailed specifications: 2SB1168, 2SB1168Q, 2SB1168R, 2SB1168S, 2SB1168T, 2SB1169, 2SB117, 2SB1170, 431, 2SB1172, 2SB1173, 2SB1174, 2SB1175, 2SB1176, 2SB1177, 2SB1178, 2SB1179
Keywords - 2SB1171 pdf specs
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BJT Parameters and How They Relate
History: 2N3582 | 2SA1064 | 2N3663 | 2SB120 | 2N371-33 | D32S5 | 2N5634
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