2SB1186A pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2SB1186A Specs and Replacement

Type Designator: 2SB1186A

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 25 MHz

Forward Current Transfer Ratio (hFE), MIN: 90

Noise Figure, dB: -

Package: TO220

2SB1186A Substitution

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2SB1186A datasheet

..1. Size:48K rohm

2sb1275 2sb1236a 2sb1569a 2sb1186a 2sd2211 2sd1918 2sd1857a 2sd2400a 2sd1763a.pdf pdf_icon

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A Transistors Transistors 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A (96-612-A58) (96-744-C58) 277 ... See More ⇒

..2. Size:161K jmnic

2sb1186a.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1186A DESCRIPTION With TO-220Fa package Low collector saturation votlage Complement to type 2SD1763A High breakdown voltage APPLICATIONS For use in low frequency power amplifer applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER ... See More ⇒

..3. Size:216K inchange semiconductor

2sb1186a.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1186A DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -160V(Min.) (BR)CEO Good Linearity of h FE Complement to Type 2SD1763A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

7.1. Size:62K rohm

2sb1186 1-2.pdf pdf_icon