All Transistors. 2SB1186A Datasheet

 

2SB1186A Datasheet and Replacement


   Type Designator: 2SB1186A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 25 MHz
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: TO220
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2SB1186A Datasheet (PDF)

 ..1. Size:48K  rohm
 2sb1275 2sb1236a 2sb1569a 2sb1186a 2sd2211 2sd1918 2sd1857a 2sd2400a 2sd1763a.pdf pdf_icon

2SB1186A

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186ATransistorsTransistors2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A(96-612-A58)(96-744-C58)277

 ..2. Size:161K  jmnic
 2sb1186a.pdf pdf_icon

2SB1186A

JMnic Product Specification Silicon PNP Power Transistors 2SB1186A DESCRIPTION With TO-220Fa package Low collector saturation votlage Complement to type 2SD1763A High breakdown voltage APPLICATIONS For use in low frequency power amplifer applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER

 ..3. Size:216K  inchange semiconductor
 2sb1186a.pdf pdf_icon

2SB1186A

isc Silicon PNP Power Transistor 2SB1186ADESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -160V(Min.)(BR)CEOGood Linearity of hFEComplement to Type 2SD1763AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)

 7.1. Size:62K  rohm
 2sb1186 1-2.pdf pdf_icon

2SB1186A

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Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: HUN2136 | CSC1675O | 2SA332 | BC859BLT1 | BD956F | 9014W | 2SA1381C

Keywords - 2SB1186A transistor datasheet

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