All Transistors. 2SB1197 Datasheet

 

2SB1197 Datasheet and Replacement


   Type Designator: 2SB1197
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 165 °C
   Transition Frequency (ft): 75 MHz
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO236
      - BJT Cross-Reference Search

   

2SB1197 Datasheet (PDF)

 ..1. Size:693K  secos
2sb1197.pdf pdf_icon

2SB1197

2SB1197 -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 Low VCE(sat).VCE(sat)-0.5V(IC / IB = -0.5A /-50mA) A IC =-0.8A L3 Complements of the 2SD1781 3Top ViewC B11 2CLASSIFICATION OF hFE 2K EProduct-Rank 2SB1197-P 2SB1197-Q 2SB1197-R

 ..2. Size:586K  jiangsu
2sb1197.pdf pdf_icon

2SB1197

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB1197 TRANSISTOR (PNP)SOT-23 FEATURES Unit : mm 1. BASE Low VCE(sat).VCE(sat)

 ..3. Size:309K  htsemi
2sb1197.pdf pdf_icon

2SB1197

2SB1 1 97 TRANSISTOR(PNP)SOT-23 1. BASE Unit : mm FEATURES 2. EMITTER 3. COLLECTOR Low VCE(sat).VCE(sat)

 ..4. Size:199K  lge
2sb1197 sot-23.pdf pdf_icon

2SB1197

2SB1197 SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Low VCE(sat).VCE(sat)

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: TI413 | KRA741U | D60T5050 | 3DD13007_Z8 | BCW79-10 | MJD117T4 | ZXTP2012Z

Keywords - 2SB1197 transistor datasheet

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