2SB1198 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB1198
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 165 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO236
2SB1198 Transistor Equivalent Substitute - Cross-Reference Search
2SB1198 Datasheet (PDF)
2sb1198.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR DESCRIPTION The UTC 2SB1198 is an epitaxial planar type PNP silicontransistor. FEATURES * High breakdown voltage : BVCEO= -80V * Low VCE(sat) : VCE(sat)= -0.2V (Typ) (IC/IB = -0.5A/-50mA) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing
2sb1198.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-232SB1198 TRANSISTOR (PNP)FEATURES 1. BASE Low VCE(sat)2. EMITTER High breakdown voltage3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -
2sb1198k.pdf
TransistorsLow-frequency Transistor (*80V, *0.5A)2SB1198KFFeatures FExternal dimensions (Unit:s mm)1) Low VCE(sat).VCE(sat) = *0.2V (Typ.)(IC / IB = *0.5A / *50mA)2) High breakdown voltage.BVCEO = *80V3) Complements the 2SD1782K.FStructureEpitaxial planar typePNP silicon transistorSOT-89FAbsolute maximum ratings (Ta = 25_C)FElectrical characteristics (Ta = 25_C)
2sb1198kfra.pdf
TransistorsAEC-Q101 QualifiedLow-frequency Transistor (*80V, *0.5A)2SB1198KFRA2SB1198KFFeatures FExternal dimensions (Unit:s mm)1) Low VCE(sat).VCE(sat) = *0.2V (Typ.)(IC / IB = *0.5A / *50mA)2) High breakdown voltage.BVCEO = *80V2SD1782KFRA3) Complements the 2SD1782K.FStructureEpitaxial planar typePNP silicon transistorFAbsolute maximum ratings (Ta = 25_C)FE
2sb1198k sot-23-3l.pdf
2SB1198K SOT-23-3L Transistor(PNP)1. BASE SOT-23-3L2. EMITTER 2.923. COLLECTOR 0.351.17Features2.80 1.60 Low VCE(sat): VCE(sat)=-0.2V(Typ.)(IC=-0.5A,IB=-50mA) High breakdown voltage BVCEO=-80V Complements the 2SD1782K 0.151.90Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collect
2sb1198k.pdf
SMD Type TransistorsPNP Transistors2SB1198KSOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-80V 1 2+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SD1782K+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collec
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
