2SB1198 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2SB1198 Specs and Replacement

Type Designator: 2SB1198

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 165 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: TO236

2SB1198 Substitution

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2SB1198 datasheet

..1. Size:246K utc

2sb1198.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR DESCRIPTION The UTC 2SB1198 is an epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage BVCEO= -80V * Low VCE(sat) VCE(sat)= -0.2V (Typ) (IC/IB = -0.5A/-50mA) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing ... See More ⇒

..2. Size:645K jiangsu

2sb1198.pdf pdf_icon

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SB1198 TRANSISTOR (PNP) FEATURES 1. BASE Low VCE(sat) 2. EMITTER High breakdown voltage 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -... See More ⇒

0.1. Size:985K rohm

2sb1198k.pdf pdf_icon

Transistors Low-frequency Transistor (*80V, *0.5A) 2SB1198K FFeatures FExternal dimensions (Unit s mm) 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 3) Complements the 2SD1782K. FStructure Epitaxial planar type PNP silicon transistor SOT-89 FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C) ... See More ⇒

0.2. Size:965K rohm

2sb1198kfra.pdf pdf_icon

Transistors AEC-Q101 Qualified Low-frequency Transistor (*80V, *0.5A) 2SB1198KFRA 2SB1198K FFeatures FExternal dimensions (Unit s mm) 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 2SD1782KFRA 3) Complements the 2SD1782K. FStructure Epitaxial planar type PNP silicon transistor FAbsolute maximum ratings (Ta = 25_C) FE... See More ⇒