2N1500 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N1500
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.06 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO9
2N1500 Transistor Equivalent Substitute - Cross-Reference Search
2N1500 Datasheet (PDF)
ixtt12n150 ixth12n150.pdf
High Voltage VDSS = 1500VIXTT12N150ID25 = 12APower MOSFETIXTH12N150 RDS(on) 2.2 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-268 (IXTT)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VVGSS Continuous 30 VTO-247 (IXTH)VG
ixth12n150 ixtt12n150.pdf
High Voltage VDSS = 1500VIXTT12N150ID25 = 12APower MOSFETsIXTH12N150 RDS(on) 2 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-268 (IXTT)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VVGSS Continuous 30 VTO-247 (IXTH)VGSM Transient
ixtt12n150hv.pdf
High Voltage VDSS = 1500VIXTT12N150HVID25 = 12APower MOSFET RDS(on) 2.2 N-Channel Enhancement ModeFast Intrinsic DiodeTO-268HVGSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VG = Gate D = DrainVGSS Continuous 30 V
ixth2n150l.pdf
Advance Technical InformationLinearTM Power MOSFET VDSS = 1500VIXTH2N150LID25 = 2Aw/Extended FBSOA RDS(on) 15 N-Channel Enhancement ModeGuaranteed FBSOAAvalanche RatedTO-247GD (Tab)SSymbol Test Conditions Maximum RatingsG = Gate D = DrainVDSS TJ = 25C to 150C 1500 V S = Source Tab = DrainVDGR TJ = 25C to 150C
ixth2n150.pdf
Advance Technical InformationHigh Voltage VDSS = 1500VIXTH2N150ID25 = 2APower MOSFET RDS(on) 9.2 N-Channel Enhancement ModeFast Intrinsic DiodeTO-247Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1500 VVDGR TJ = 25C to 150C, RGS = 1M 1500 VGDTabVGSS Continuous 30 VSVGSM Transient 40 VG
sfp075n150c2 sfb072n150c2.pdf
SFP075N150C2,SFB072N150C2N-MOSFET 150V, 6.2m, 120AFeatures Product Summary Enhancement ModeVDS150V Very Low On-ResistanceRDS(on)6.2m Fast SwitchingID 120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested
sfp075n150i2 sfb072n150i2.pdf
SFP075N150I2,SFB072N150I2N-MOSFET 150V, 6.2m, 120AFeatures Product Summary Enhancement ModeVDS150V Very Low On-ResistanceRDS(on)6.2m Fast SwitchingID 120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested
sfw072n150c2.pdf
SFW072N150C2 N-MOSFET 150V, 6.0m, 140AFeatures Product Summary Enhancement Mode VDS150V Very Low On-Resistance RDS(on)6.0m Fast Switching ID 140A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche TestedBattery m
Datasheet: 2N1495A , 2N1496 , 2N1497 , 2N1499 , 2N1499A , 2N1499B , 2N149A , 2N150 , 2SC1815 , 2N1500-18 , 2N1501 , 2N1502 , 2N1504 , 2N1504-10 , 2N1505 , 2N1506 , 2N1506A .
