All Transistors. 2SB1272Q Datasheet

 

2SB1272Q Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SB1272Q

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO126

2SB1272Q Transistor Equivalent Substitute - Cross-Reference Search

 

2SB1272Q Datasheet (PDF)

3.1. 2sb1272.pdf Size:135K _inchange_semiconductor

2SB1272Q
2SB1272Q

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1272 DESCRIPTION · ·With TO-126 package ·DARLINGTON ·High DC current gain APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNI

4.1. 2sb1274 3ca1274.pdf Size:241K _update

2SB1272Q
2SB1272Q

2SB1274(3CA1274) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于低频功率放大。 Purpose: Low frequency power amplifier applications. 特点:击穿电压高,饱和压降低,安全工作区宽。 Features: High V ,low saturation voltage, wide ASO. CEO 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V CBO

4.2. 2sb1270.pdf Size:121K _sanyo

2SB1272Q
2SB1272Q

4.3. 2sb1274.pdf Size:34K _sanyo

2SB1272Q
2SB1272Q

Ordering number : ENN2246B 2SB1274/2SD1913 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1274/2SD1913 60V/3A Low-Frequency Power Amplifier Applications Applications Package Dimensions General power amplifier. unit : mm 2041A [2SB1274/2SD1913] 4.5 10.0 2.8 Features 3.2 Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown volta

4.4. 2sb1271.pdf Size:125K _sanyo

2SB1272Q
2SB1272Q

4.5. 2sb1188 2sb1182 2sb1240 2sb822 2sb1277 2sb911m.pdf Size:130K _rohm

2SB1272Q
2SB1272Q

Transistors Medium power Transistor(*32V,*2A) 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures FExternal dimensions (Unit: mm) 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. FStructure Epitaxial planar type PNP silicon transistor (96-131-B24) 215 2SB1188 / 2

4.6. 2sb1275 2sb1236a 2sb1569a 2sb1186a 2sd2211 2sd1918 2sd1857a 2sd2400a 2sd1763a.pdf Size:48K _rohm

2SB1272Q

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A Transistors Transistors 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A (96-612-A58) (96-744-C58) 277

4.7. 2sb1275 2sb1236a.pdf Size:169K _rohm

2SB1272Q
2SB1272Q

Power Transistor (?160V, ?1.5A) 2SB1275 / 2SB1236A ?Features ?Dimensions (Unit : mm) 1) High breakdown voltage.(BVCEO = ?160V) 2) Low collector output capacitance. 2SB1275 5.5 1.5 (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 0.9 4) Complements the 2SD1918 / 2SD1857A. C0.5 0.8Min. 1.5 2.5 9.5 (1) Base(Gate) ?Absolute maximum ratings (Ta = 25?C) ROHM : C

4.8. 2sb1275.pdf Size:169K _rohm

2SB1272Q
2SB1272Q

Power Transistor (?160V, ?1.5A) 2SB1275 / 2SB1236A ?Features ?Dimensions (Unit : mm) 1) High breakdown voltage.(BVCEO = ?160V) 2) Low collector output capacitance. 2SB1275 5.5 1.5 (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 0.9 4) Complements the 2SD1918 / 2SD1857A. C0.5 0.8Min. 1.5 2.5 9.5 (1) Base(Gate) ?Absolute maximum ratings (Ta = 25?C) ROHM : C

4.9. 2sb851 2sb1278.pdf Size:114K _rohm

2SB1272Q
2SB1272Q

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

4.10. 2sb1273.pdf Size:123K _inchange_semiconductor

2SB1272Q
2SB1272Q

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1273 DESCRIPTION Ў¤ With TO-220 package Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ Designed for use in low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum rat

4.11. 2sb1274.pdf Size:154K _inchange_semiconductor

2SB1272Q
2SB1272Q

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1274 DESCRIPTION Ў¤ With TO-220F package Ў¤ Complement to type 2SD1913 Ў¤ High reliability. Ў¤ High breakdown voltage Ў¤ Low saturation voltage. Ў¤ Wide area of safe operation APPLICATIONS Ў¤ 60V/3A low-frequency power amplifier Ў¤ General power amplifier applications PINNING PIN 1 2 3 Emitte

4.12. 2sb1274.pdf Size:302K _lge

2SB1272Q
2SB1272Q

2SB1274(PNP) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage. MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector- Base Voltage -60 V VCEO Collector-Emitte

4.13. 2sb1275.pdf Size:1584K _kexin

2SB1272Q
2SB1272Q

SMD Type Transistors PNP Transistors 2SB1275 TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 ■ Features 0.50 -0.7 ● High voltage : VCEO= -160V ● Suitable for Middle Power Driver ● Complementary to 2SD1918 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ Pa

Datasheet: 2SB1270Q , 2SB1270R , 2SB1270S , 2SB1271 , 2SB1271Q , 2SB1271R , 2SB1271S , 2SB1272 , S9012 , 2SB1272R , 2SB1272S , 2SB1273 , 2SB1273Q , 2SB1273R , 2SB1273S , 2SB1274 , 2SB1274Q .

 


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