All Transistors. 2N150A Datasheet

 

2N150A Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N150A
   Material of Transistor: Ge
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.065 W
   Maximum Collector-Base Voltage |Vcb|: 32 V
   Maximum Collector Current |Ic max|: 0.005 A
   Max. Operating Junction Temperature (Tj): 75 °C
   Transition Frequency (ft): 0.5 MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO22

 2N150A Transistor Equivalent Substitute - Cross-Reference Search

   

2N150A Datasheet (PDF)

 9.1. Size:175K  ixys
ixtt12n150 ixth12n150.pdf

2N150A
2N150A

High Voltage VDSS = 1500VIXTT12N150ID25 = 12APower MOSFETIXTH12N150 RDS(on) 2.2 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-268 (IXTT)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VVGSS Continuous 30 VTO-247 (IXTH)VG

 9.2. Size:122K  ixys
ixth12n150 ixtt12n150.pdf

2N150A
2N150A

High Voltage VDSS = 1500VIXTT12N150ID25 = 12APower MOSFETsIXTH12N150 RDS(on) 2 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-268 (IXTT)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VVGSS Continuous 30 VTO-247 (IXTH)VGSM Transient

 9.3. Size:142K  ixys
ixtt12n150hv.pdf

2N150A
2N150A

High Voltage VDSS = 1500VIXTT12N150HVID25 = 12APower MOSFET RDS(on) 2.2 N-Channel Enhancement ModeFast Intrinsic DiodeTO-268HVGSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VG = Gate D = DrainVGSS Continuous 30 V

 9.4. Size:109K  ixys
ixth2n150l.pdf

2N150A
2N150A

Advance Technical InformationLinearTM Power MOSFET VDSS = 1500VIXTH2N150LID25 = 2Aw/Extended FBSOA RDS(on) 15 N-Channel Enhancement ModeGuaranteed FBSOAAvalanche RatedTO-247GD (Tab)SSymbol Test Conditions Maximum RatingsG = Gate D = DrainVDSS TJ = 25C to 150C 1500 V S = Source Tab = DrainVDGR TJ = 25C to 150C

 9.5. Size:140K  ixys
ixth2n150.pdf

2N150A
2N150A

Advance Technical InformationHigh Voltage VDSS = 1500VIXTH2N150ID25 = 2APower MOSFET RDS(on) 9.2 N-Channel Enhancement ModeFast Intrinsic DiodeTO-247Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1500 VVDGR TJ = 25C to 150C, RGS = 1M 1500 VGDTabVGSS Continuous 30 VSVGSM Transient 40 VG

 9.6. Size:1265K  cn scilicon
sfp075n150c2 sfb072n150c2.pdf

2N150A
2N150A

SFP075N150C2,SFB072N150C2N-MOSFET 150V, 6.2m, 120AFeatures Product Summary Enhancement ModeVDS150V Very Low On-ResistanceRDS(on)6.2m Fast SwitchingID 120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested

 9.7. Size:1216K  cn scilicon
sfp075n150i2 sfb072n150i2.pdf

2N150A
2N150A

SFP075N150I2,SFB072N150I2N-MOSFET 150V, 6.2m, 120AFeatures Product Summary Enhancement ModeVDS150V Very Low On-ResistanceRDS(on)6.2m Fast SwitchingID 120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested

 9.8. Size:1331K  cn scilicon
sfw072n150c2.pdf

2N150A
2N150A

SFW072N150C2 N-MOSFET 150V, 6.0m, 140AFeatures Product Summary Enhancement Mode VDS150V Very Low On-Resistance RDS(on)6.0m Fast Switching ID 140A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche TestedBattery m

Datasheet: 2N1504 , 2N1504-10 , 2N1505 , 2N1506 , 2N1506A , 2N1507 , 2N1508 , 2N1509 , 13005 , 2N1510 , 2N1511 , 2N1512 , 2N1513 , 2N1514 , 2N1515 , 2N1516 , 2N1517 .

 

 
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