2N150A Todos los transistores

 

2N150A Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N150A
   Material: Ge
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.065 W
   Tensión colector-base (Vcb): 32 V
   Corriente del colector DC máxima (Ic): 0.005 A
   Temperatura operativa máxima (Tj): 75 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 0.5 MHz
   Capacitancia de salida (Cc): 2 pF
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: TO22
 

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2N150A datasheet

 9.1. Size:175K  ixys
 ixtt12n150 ixth12n150.pdf pdf_icon

2N150A

High Voltage VDSS = 1500V IXTT12N150 ID25 = 12A Power MOSFET IXTH12N150 RDS(on) 2.2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 1500 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V VGSS Continuous 30 V TO-247 (IXTH) VG... See More ⇒

 9.2. Size:122K  ixys
 ixth12n150 ixtt12n150.pdf pdf_icon

2N150A

High Voltage VDSS = 1500V IXTT12N150 ID25 = 12A Power MOSFETs IXTH12N150 RDS(on) 2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 1500 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V VGSS Continuous 30 V TO-247 (IXTH) VGSM Transient... See More ⇒

 9.3. Size:142K  ixys
 ixtt12n150hv.pdf pdf_icon

2N150A

High Voltage VDSS = 1500V IXTT12N150HV ID25 = 12A Power MOSFET RDS(on) 2.2 N-Channel Enhancement Mode Fast Intrinsic Diode TO-268HV G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 1500 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V G = Gate D = Drain VGSS Continuous 30 V ... See More ⇒

 9.4. Size:109K  ixys
 ixth2n150l.pdf pdf_icon

2N150A

Advance Technical Information LinearTM Power MOSFET VDSS = 1500V IXTH2N150L ID25 = 2A w/Extended FBSOA RDS(on) 15 N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-247 G D (Tab) S Symbol Test Conditions Maximum Ratings G = Gate D = Drain VDSS TJ = 25 C to 150 C 1500 V S = Source Tab = Drain VDGR TJ = 25 C to 150 C... See More ⇒

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Otros transistores... 2N1504 , 2N1504-10 , 2N1505 , 2N1506 , 2N1506A , 2N1507 , 2N1508 , 2N1509 , 2SC2655 , 2N1510 , 2N1511 , 2N1512 , 2N1513 , 2N1514 , 2N1515 , 2N1516 , 2N1517 .

 

 
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