2SB1335 Specs and Replacement
Type Designator: 2SB1335
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 6 MHz
Forward Current Transfer Ratio (hFE), MIN: 120
Package: TO220
2SB1335 Substitution
- BJT ⓘ Cross-Reference Search
2SB1335 datasheet
2SB1335 Transistors Transistors 2SD1855 (94L-356-B14) (94L-878-D14) 279 ... See More ⇒
isc Silicon PNP Power Transistor 2SB1335 DESCRIPTION High Collector Current I = -4A C Low Collector Saturation Voltage V = -1.5V(Max)@I = -3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1855 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE... See More ⇒
Detailed specifications: 2SB1323, 2SB1324, 2SB1325, 2SB1326, 2SB1327, 2SB132A, 2SB133, 2SB1334, BC546, 2SB1337, 2SB1338, 2SB1339, 2SB134, 2SB1340, 2SB1341, 2SB1342, 2SB1343
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