All Transistors. 2SB1335 Datasheet

 

2SB1335 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SB1335
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 6 MHz
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO220

 2SB1335 Transistor Equivalent Substitute - Cross-Reference Search

   

2SB1335 Datasheet (PDF)

 ..1. Size:57K  rohm
2sb1335 1-2.pdf

2SB1335 2SB1335

 ..2. Size:38K  rohm
2sb1335.pdf

2SB1335

2SB1335TransistorsTransistors2SD1855(94L-356-B14)(94L-878-D14)279

 ..3. Size:218K  inchange semiconductor
2sb1335.pdf

2SB1335 2SB1335

isc Silicon PNP Power Transistor 2SB1335DESCRIPTIONHigh Collector Current:: I = -4ACLow Collector Saturation Voltage: V = -1.5V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1855Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE

 8.1. Size:110K  rohm
2sb1334.pdf

2SB1335 2SB1335

 8.2. Size:211K  inchange semiconductor
2sb1339.pdf

2SB1335 2SB1335

isc Silicon PNP Darlington Power Transistor 2SB1339DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh DC Current Gain-: h =1000(Min)@ (V = -3V, I = -2A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RATINGS(T =25

 8.3. Size:89K  inchange semiconductor
2sb1334a.pdf

2SB1335 2SB1335

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1334A DESCRIPTION With TO-220 package Wide area of safe operation Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2mounting base Fig.1 simplified outline (TO-220)

 8.4. Size:217K  inchange semiconductor
2sb1334.pdf

2SB1335 2SB1335

isc Silicon PNP Power Transistor 2SB1334DESCRIPTIONHigh Collector Current:: I = -4ACLow Collector Saturation Voltage: V = -1.5V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1778Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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