All Transistors. 2SB14 Datasheet

 

2SB14 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SB14

Material of Transistor: Ge

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 70 °C

Transition Frequency (ft): 0.35 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO1

2SB14 Transistor Equivalent Substitute - Cross-Reference Search

 

2SB14 Datasheet (PDF)

1.1. 2sb1478.pdf Size:68K _update

2SB14
2SB14



1.2. 2sb1412 3ca1412.pdf Size:245K _update

2SB14
2SB14

2SB1412(3CA1412) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于中功率放大。 Purpose: Medium power amplifier applications. 特点:饱和压降低,极好的直流电流增益特性,与 2SD2118(3DG2118)互补。 Features: Low V ,excellent DC current gain characteristics, complements the 2SD2118(3DG2118). CE(sat) 极限参数/Absolute maximum ratings(Ta=25℃)

1.3. 2sb1412-r.pdf Size:39K _update

2SB14

SMD Type Transistors Low Frequency Transistor 2SB1412 TO-252 Unit: mm +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Features Low VCE(sat). PNP silicon transistor. 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emit

1.4. 2sb1412-q.pdf Size:39K _update

2SB14

SMD Type Transistors Low Frequency Transistor 2SB1412 TO-252 Unit: mm +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Features Low VCE(sat). PNP silicon transistor. 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emit

1.5. 2sb1477.pdf Size:67K _update

2SB14
2SB14



1.6. 2sb1443.pdf Size:165K _update

2SB14
2SB14

Power Transistor (-50V, -2A) 2SB1443 Features Dimensions (Unit : mm) 1) Low saturation voltage. ATV VCE (sat) = -0.35V (Max.) at IC / IB = -1A / 50mA. 2) Excellent DC current gain characteristics. Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit (1) (2) (3) (1) (2) (3) (1) Emitter Collector-base voltage VCBO -50 V (2) Collector Collector-emitter

1.7. 2sb1412-p.pdf Size:39K _update

2SB14

SMD Type Transistors Low Frequency Transistor 2SB1412 TO-252 Unit: mm +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Features Low VCE(sat). PNP silicon transistor. 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emit

1.8. 2sb1481.pdf Size:179K _toshiba

2SB14
2SB14

1.9. 2sb1495.pdf Size:179K _toshiba

2SB14
2SB14

1.10. 2sb1411.pdf Size:215K _toshiba

2SB14
2SB14

1.11. 2sb1457.pdf Size:191K _toshiba

2SB14
2SB14

1.12. 2sb1406.pdf Size:70K _sanyo

2SB14
2SB14

Ordering number:EN3470 PNP Epitaxial Planar Silicon Darlington Transistor 2SB1406 Driver Applications Applications Package Dimensions Relay drivers, hammer drivers, lamp drivers, motor unit:mm drivers. 2064 [2SB1406] Features Darlington connection. High DC current gain. Large current capacity. E : Emitter C : Collector B : Base SANYO : NMP Specifications Absolute Max

1.13. 2sb1405.pdf Size:73K _sanyo

2SB14
2SB14

Ordering number:EN3236 PNP Epitaxial Planar Silicon Transistor 2SB1405 General Driver Applications Features Package Dimensions Darlington connection. unit:mm High DC current gain. 2064 Large current capacity, wide ASO. [2SB1405] E : Emitter C : Collector B : Base SANYO : NMP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Col

1.14. 2sb1475.pdf Size:261K _nec

2SB14
2SB14

1.15. 2sb1430.pdf Size:115K _nec

2SB14
2SB14

DATA SHEET SILICON POWER TRANSISTOR 2SB1430 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1430 is a Darlington power transistor that can directly PACKAGE DRAWING (UNIT: mm) drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, this tr

1.16. 2sb1465.pdf Size:95K _nec

2SB14
2SB14

PRELIMINARY DATA SHEET DARLINGTON POWER TRANSISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power transistor developed for low- PACKAGE DRAWING (UNIT: mm) frequency power amplifier and low-speed switching. This transistor is ideal for use in a direct drive from IC output to relay drivers

1.17. 2sb1453.pdf Size:130K _nec

2SB14
2SB14

DATA SHEET SILICON TRANSISTOR 2SB1453 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1453 is a power transistor that can directly drive from PACKAGE DRAWING (UNIT: mm) the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, a small resin-molded insulation type package contributes to high-density mo

1.18. 2sb1432.pdf Size:106K _nec

2SB14
2SB14

DATA SHEET SILICON POWER TRANSISTOR 2SB1432 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1432 is a Darlington power transistor that can be directly ORDERING INFORMATION driven from the output of an IC. This transistor is ideal for OA and FA Part No. Package equipment such as motor and solenoid drivers. 2SB1432 I

1.19. 2sb1424.pdf Size:101K _rohm

2SB14
2SB14

Transistors Low VCE(sat) Transistor (*20V, *3A) 2SB1424 / 2SA1585S FFeatures FExternal dimensions (Units: mm) 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC/IB = *2A / *0.1A) 2) Excellent DC current gain charac- teristics. 3) Complements the 2SD2150 / 2SC4115S. FStructure Epitaxial planar type PNP silicon transistor FAbsolute maximum ratings (Ta = 25_C) (96-596-A74) 201 Transistors

1.20. 2sa1797 2sb1443 2sc4672.pdf Size:45K _rohm

2SB14

2SA1797 / 2SB1443 Transistors Transistors 2SC4672 (96-100-B208) (96-181-D208) 291

1.21. 2sb1386 2sb1412 2sb1326.pdf Size:93K _rohm

2SB14
2SB14

2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor (-20V, -5A) 2SB1386 / 2SB1412 / 2SB1326 External dimensions (Units : mm) Features 1) Low VCE(sat). 2SB1386 2SB1412 VCE(sat) = -0.35V (Typ.) 2.3+0.2 6.50.2 -0.1 4.5+0.2 C0.5 -0.1 5.1+0.2 (IC/IB = -4A / -0.1A) 1.5+0.2 -0.1 0.50.1 1.60.1 -0.1 2) Excellent DC current gain characteristics. 3) Complements the 2SD209

1.22. 2sa1585s 2sb1424.pdf Size:101K _rohm

2SB14
2SB14

Transistors Low VCE(sat) Transistor (*20V, *3A) 2SB1424 / 2SA1585S FFeatures FExternal dimensions (Units: mm) 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC/IB = *2A / *0.1A) 2) Excellent DC current gain charac- teristics. 3) Complements the 2SD2150 / 2SC4115S. FStructure Epitaxial planar type PNP silicon transistor FAbsolute maximum ratings (Ta = 25_C) (96-596-A74) 201 Transistors

1.23. 2sb1474.pdf Size:53K _rohm

2SB14

2SB1474 Transistor Power Transistor (-80V, -4A) 2SB1474 Features External dimensions (Units : mm) 1) Darlington connection for a high hFE. 2) Built-in resistor between base and emitter. 5.5 1.5 3) Built-in damper doide. 0.9 C0.5 Absolute maximum ratings (Ta=25C) 0.8Min. (1) Base(Gate) 1.5 2.5 (2) Collector(Drain) ROHM : CPT3 9.5 Parameter Symbol Limits Unit (3) Emitter(Source)

1.24. 2sb1424 2sa1585s.pdf Size:81K _rohm

2SB14
2SB14

2SB1424 / 2SA1585S Transistors Low VCE(sat) Transistor (-20V, -3A) 2SB1424 / 2SA1585S External dimensions (Unit : mm) Features 1) Low VCE(sat). 2SB1424 2SA1585S VCE(sat) = -0.2V (Typ.) 40.2 20.2 4.5+0.2 (IC/IB = -2A / -0.1A) -0.1 1.50.1 1.60.1 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. 0.45+0.15 (1) (2) (3) -0.05 0.4+0.

1.25. 2sa1797 2sb1443.pdf Size:57K _rohm

2SB14

2SA1797 / 2SB1443 Transistors Power Transistor (-50V, -2A) 2SA1797 / 2SB1443 Features 1) Low saturation voltage. VCE (sat) = -0.35V (Max.) at IC / IB = -1A / -50mA. 2) Excellent DC current gain characteristics. 4) Complements the 2SA1797 and 2SC4672. Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCE

1.26. 2sb1443.pdf Size:148K _rohm

2SB14
2SB14

Power Transistor (-50V, -2A) 2SB1443 ?Features ?Dimensions (Unit : mm) 1) Low saturation voltage. ATV VCE (sat) = -0.35V (Max.) at IC / IB = -1A / ?50mA. 2) Excellent DC current gain characteristics. ?Absolute maximum ratings (Ta=25?C) Parameter Symbol Limits Unit (1) (2) (3) (1) (2) (3) (1) Emitter Collector-base voltage VCBO -50 V (2) Collector Collector-emitter voltage VCEO

1.27. 2sb1427.pdf Size:62K _rohm

2SB14
2SB14

2SB1427 Transistors Power transistor (-20V, -2A) 2SB1427 External dimensions (Unit : mm) Features 1) Low saturation voltage, 4.0 VCE : Max . -0.5V at IC/IB = -1A / -50mA. 1.0 2.5 0.5 2) Excellent DC current gain characteristics. (1) (2) (3) (1) Base (2) Collector (3) Emitter ROHM : MPT3 EIAJ : SC-62 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit

1.28. 2sb1440.pdf Size:79K _panasonic

2SB14
2SB14

Transistors 2SB1440 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification 4.50.1 1.60.2 1.50.1 Complementary to 2SD2185 Features Low collector-emitter saturation voltage VCE(sat) 1 23 0.40.08 0.50.08 0.40.04 Mini Power type package, allowing downsizing of the equipment 1.50.1 and automatic insertion through the tape packing and the maga- zine

1.29. 2sb1488.pdf Size:41K _panasonic

2SB14
2SB14

Transistor 2SB1488 Silicon PNP triple diffusion planer type Unit: mm For power switching 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features 0.65 max. High foward current transfer ratio hFE. High-speed switching. High collector to base voltage VCBO. Allowing supply with the radial taping. +0.1 0.450.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter

1.30. 2sb1446 e.pdf Size:44K _panasonic

2SB14
2SB14

Transistor 2SB1446 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm Complementary to 2SD2179 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.65 max. +0.1 Absolute Maximum Ratings (Ta=25?C) 0.450.05 2.5 0.5 2.5 0.5 Parameter Symbol Ratings U

1.31. 2sb1418.pdf Size:61K _panasonic

2SB14
2SB14

Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type Darlington Unit: mm For power amplification Complementary to 2SD2138 and 2SD2138A 5.0 0.1 10.0 0.2 1.0 Features High foward current transfer ratio hFE 90 High-speed switching Allowing automatic insertion with radial taping 1.2 0.1 C1.0 2.25 0.2 0.65 0.1 Absolute Maximum Ratings (TC=25?C) 0.35 0.1 1.05 0

1.32. 2sb1435.pdf Size:79K _panasonic

2SB14
2SB14

Power Transistors 2SB1435 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm 7.50.2 4.50.2 Features Low collector-emitter saturation voltage VCE(sat) Large collector current IC 0.650.1 0.850.1 0.8 C 0.8 C Allowing automatic insertion with radial taping 1.00.1 0.70.1 0.70.1 1.150.2 Absolute Maximum Ratings Ta = 25C 1.150.2 Paramete

1.33. 2sb1493.pdf Size:68K _panasonic

2SB14
2SB14

Power Transistors 2SB1493 Silicon PNP epitaxial planar type Darlington For power amplification Unit: mm Complementary to 2SD2255 15.0 0.5 4.5 0.2 13.0 0.5 10.5 0.5 2.0 0.1 Features Optimum for 60W HiFi output High foward current transfer ratio hFE: 5000 to 30000 ? 3.2 0.1 Low collector to emitter saturation voltage VCE(sat): < 2.5V 2.0 0.2 1.4 0.3 Absolute Maximum Ratings

1.34. 2sb1434 e.pdf Size:43K _panasonic

2SB14
2SB14

Transistor 2SB1434 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm Complementary to 2SD2177 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.65 max. +0.1 Absolute Maximum Ratings (Ta=25?C) 0.450.05 2.5 0.5 2.5 0.5 Parameter Symbol Ratings

1.35. 2sb1462.pdf Size:97K _panasonic

2SB14
2SB14

Transistors 2SB1462 Silicon PNP epitaxial planar type For general amplification Unit: mm 0.2+0.1 0.15+0.1 Complementary to 2SD2216 0.05 0.05 3 Features High forward current transfer ratio hFE SS-Mini type package allowing downsizing of the equipment and automatic insertion through the tape packing 1 2 (0.5) (0.5) 1.00.1 1.60.1 5? Absolute Maximum Ratings Ta = 25C Pa

1.36. 2sb1463 e.pdf Size:40K _panasonic

2SB14
2SB14

Transistor 2SB1463 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Unit: mm Complementary to 2SD2240 1.6 0.15 0.4 0.8 0.1 0.4 Features High collector to emitter voltage VCEO. 1 Low noise voltage NV. SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing and the maga- zine packing. 2 Absol

1.37. 2sb1470.pdf Size:95K _panasonic

2SB14
2SB14

Power Transistors 2SB1470 Silicon PNP triple diffusion planar type darlington Unit: mm 20.00.5 5.00.3 For power amplification (3.0) Complementary to 2SD2222 ? 3.30.2 Features Optimum for 120 W HiFi output (1.5) High forward current transfer ratio hFE (1.5) Low collector-emitter saturation voltage VCE(sat) 2.00.3 2.70.3 3.00.3 1.00.2 0.60.2 Absolute Maximum Ratin

1.38. 2sb1488 e.pdf Size:46K _panasonic

2SB14
2SB14

Transistor 2SB1488 Silicon PNP triple diffusion planer type Unit: mm For power switching 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features 0.65 max. High foward current transfer ratio hFE. High-speed switching. High collector to base voltage VCBO. Allowing supply with the radial taping. +0.1 0.450.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter

1.39. 2sb1462j e.pdf Size:38K _panasonic

2SB14
2SB14

Transistor 2SB1462J Silicon PNP epitaxial planer type For general amplification Unit: mm Complementary to 2SD2216J 1.60 0.05 0.80 0.80 0.05 0.425 0.425 Features High foward current transfer ratio hFE. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. +0.05 Absolute Maximum Ratings (Ta=25?C) 0.8

1.40. 2sb1462 e.pdf Size:41K _panasonic

2SB14
2SB14

Transistor 2SB1462 Silicon PNP epitaxial planer type For general amplification Unit: mm Complementary to 2SD2216 1.6 0.15 0.4 0.8 0.1 0.4 Features High foward current transfer ratio hFE. 1 SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 3 zine packing. 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol

1.41. 2sb1416.pdf Size:82K _panasonic

2SB14
2SB14

Power Transistors 2SB1416 Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 7.50.2 4.50.2 Complementary to 2SD2136 Features High forward current transfer ratio hFE which has satisfactory 0.650.1 0.850.1 0.8 C 0.8 C 1.00.1 linearity Low collector-emitter saturation voltage VCE(sat) 0.70.1 Allowing automatic insertion with radial taping 0.7

1.42. 2sb1438.pdf Size:79K _panasonic

2SB14
2SB14

Transistors 2SB1438 Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 6.90.1 2.50.1 0.7 4.0 (0.8) Features Low collector-emitter saturation voltage VCE(sat) Large collector-emitter voltage (Base open) VCEO 0.65 max. Allowing supply with the radial taping Absolute Maximum Ratings Ta = 25C Parameter Symbol Rating Unit Collector-base voltage (E

1.43. 2sb1438 e.pdf Size:44K _panasonic

2SB14
2SB14

Transistor 2SB1438 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. 0.65 max. Allowing supply with the radial taping. +0.1 0.450.05 Absolute Maximum Ratings (Ta=25?C) 2.5 0.5 2.5 0.5 Parameter

1.44. 2sb1434.pdf Size:78K _panasonic

2SB14
2SB14

Transistors 2SB1434 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm 6.90.1 2.50.1 Complementary to 2SD2177 0.7 4.0 (0.8) Features Low collector-emitter saturation voltage VCE(sat) 0.65 max. Allowing supply with the radial taping Absolute Maximum Ratings Ta = 25C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO -50 V

1.45. 2sb1492 2SD2254.pdf Size:57K _panasonic

2SB14
2SB14

Power Transistors 2SD2254 Silicon NPN triple diffusion planar type Darlington For power amplification Unit: mm ? 3.3 0.2 Complementary to 2SB1492 20.0 0.5 5.0 0.3 3.0 Features Optimum for 60W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <2.5V 1.5 1.5 2.0 0.3 2.7 0.3 3.0 0.3 Absolute Maximum Ratings (T

1.46. 2sb1440 e.pdf Size:41K _panasonic

2SB14
2SB14

Transistor 2SB1440 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm Complementary to 2SD2185 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 45 zine packing. 0.4 0.08 0.4 0.04 0.5

1.47. 2sb1446.pdf Size:39K _panasonic

2SB14
2SB14

Transistor 2SB1446 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm Complementary to 2SD2179 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.65 max. +0.1 Absolute Maximum Ratings (Ta=25?C) 0.450.05 2.5 0.5 2.5 0.5 Parameter Symbol Ratings U

1.48. 2sb1417.pdf Size:55K _panasonic

2SB14
2SB14

Power Transistors 2SB1417, 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A Unit: mm Features High forward current transfer ratio hFE which has satisfactory linearity 5.0 0.1 Low collector to emitter saturation voltage VCE(sat) 10.0 0.2 1.0 Allowing automatic insertion with radial taping 90 Absolute Maximum Ratings (TC=25?C

1.49. 2sb1473 e.pdf Size:43K _panasonic

2SB14
2SB14

Transistor 2SB1473 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm Complementary to2SD2225 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to emitter voltage VCEO. Satisfactory linearity of forward current transfer ratio hFE. 0.65 max. High transition frequency fT. Allowing supply with the radial taping. +0.1 0.450.05 2

1.50. 2sb1463.pdf Size:79K _panasonic

2SB14
2SB14

Transistors 2SB1463 Silicon PNP epitaxial planar type Unit: mm For high breakdown voltage low-frequency amplification 0.2+0.1 0.15+0.1 0.05 0.05 Complementary to 2SD2240 3 Features High collector-emitter voltage (Base open) VCEO Low noise voltage NV 1 2 (0.5) (0.5) SS-Mini type package, allowing downsizing of the equipment and 1.00.1 automatic insertion through the tape

1.51. 2sb1490.pdf Size:95K _panasonic

2SB14
2SB14

Power Transistors 2SB1490 Silicon PNP epitaxial planar type darlington Unit: mm 20.00.5 5.00.3 For power amplification (3.0) Complementary to 2SD2250 ? 3.30.2 Features Optimum for 80 W HiFi output (1.5) High forward current transfer ratio hFE (1.5) Low collector-emitter saturation voltage VCE(sat) 2.00.3 2.70.3 3.00.3 1.00.2 0.60.2 Absolute Maximum Ratings TC =

1.52. 2sb1414.pdf Size:81K _panasonic

2SB14
2SB14

Power Transistors 2SB1414 Silicon PNP epitaxial planar type For low-frequency driver/high power amplification Unit: mm 7.50.2 4.50.2 Complementary to 2SD2134 Features Excellent current IC characteristics of forward current transfer ratio 0.650.1 0.850.1 0.8 C 0.8 C 1.00.1 hFE vs. collector High transition frequency fT 0.70.1 Allowing automatic insertion with radial tap

1.53. 2sb1412.pdf Size:186K _utc

2SB14
2SB14

UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR ? DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ? FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Fr

1.54. 2sb1407.pdf Size:42K _hitachi

2SB14
2SB14

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

1.55. 2sb1494.pdf Size:35K _hitachi

2SB14
2SB14

2SB1494 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary Pair with 2SD2256 Outline TO-3P 2 1 1. Base ID 2. Collector (Flange) 3. Emitter 1 3 2 3 2SB1494 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7 V Collector cur

1.56. 2sb1400.pdf Size:35K _hitachi

2SB14
2SB14

2SB1400 Silicon PNP Epitaxial Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 1 2 1 k? 400 ? 3 (Typ) (Typ) 3 2SB1400 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7 V Collector current IC 6 A Collector p

1.57. 2sb1409.pdf Size:46K _hitachi

2SB14
2SB14

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

1.58. 2sb1401.pdf Size:29K _hitachi

2SB14
2SB14

2SB1401 Silicon PNP Triple Diffused ADE-208-875 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 1 2 55 k? 3 (Typ) 3 2SB1401 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO 7 V C

1.59. 2sb1429.pdf Size:61K _no

2SB14

1.60. 2sb1436.pdf Size:95K _savantic

2SB14
2SB14

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1436 DESCRIPTION ·With TO-126 package ·Complement to type 2SD2166 ·Low collector saturation voltage APPLICATIONS ·For audio power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CO

1.61. 2sb1440.pdf Size:99K _secos

2SB14
2SB14

2SB1440 -2 A, -50 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES 4 ? Low collector-emitter saturation voltage VCE(sat) ? For low-frequency output amplification B 1 C 2 ? Complements to 2SD2185 E 3 A E C PACKAGE INFORMATION Package MPQ LeaderSize B D SOT-89 1

1.62. 2sb1424.pdf Size:178K _secos

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2SB1424 PNP Silicon Elektronische Bauelemente Medium Power Transistor RoHS Compliant Product D A suffix of "-C" specifies halogen & lead-free D1 A b1 1.BASE SOT-89 2.COLLECTOR b C e 3. EMITTER e1 FEATURES Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A 1.400 1.600 0.055 0.063 Power dissipation b 0.320 0.520 0.013 0.020 b1 0.360 0

1.63. 2sb1429.pdf Size:199K _jmnic

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JMnic Product Specification Silicon PNP Power Transistors 2SB1429 DESCRIPTION ·With TO-3PL package ·Complement to type 2SD2155 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3 Ba

1.64. 2sb1455.pdf Size:217K _jmnic

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JMnic Product Specification Silicon PNP Power Transistors 2SB1455 DESCRIPTION ·With TO-220F package ·Complement to type 2SD2203 ·Low collector saturation voltage: ·Large current capacity APPLICATIONS ·High current power switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Base Absolute maximum ratings (Ta

1.65. 2sb1420.pdf Size:29K _sanken-ele

2SB14

E (2k?) (80?) B Darlington 2SB1420 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor Application : Chopper Regulator, DC Motor Driver and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 4.8 0.4 15.6 VCBO 120 V ICBO VCB=120V 10max A 0.1

1.66. 2sb1448.pdf Size:321K _shindengen

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SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1448 Case : ITO-3P (TP15J10) -15A PNP RATINGS Unit : mm

1.67. 2sb1481.pdf Size:226K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1481 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -1.5A) ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -3A, IBB= -6mA) ·Complement to Type 2SD2241 APPLICATIONS ·High power swi

1.68. 2sb1495.pdf Size:225K _inchange_semiconductor

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2SB14

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1495 DESCRIPTION ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -2A) ·Low-Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@IC= -1.5A ·Complement to Type 2SD2257 APPLICATIONS ·Designed for high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PA

1.69. 2sb1419.pdf Size:228K _inchange_semiconductor

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2SB14

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1419 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Power amplifier applications ·Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Vol

1.70. 2sb1404.pdf Size:228K _inchange_semiconductor

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2SB14

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1404 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -1.5A) APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Co

1.71. 2sb1403.pdf Size:93K _inchange_semiconductor

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2SB14

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1403 DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute max

1.72. 2sb1400.pdf Size:92K _inchange_semiconductor

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2SB14

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1400 DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute max

1.73. 2sb1430.pdf Size:234K _inchange_semiconductor

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2SB14

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1430 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -2A) ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -2A, IBB= -2mA) APPLICATIONS ·Designed for low-frequency power amplifiers and

1.74. 2sb1411.pdf Size:226K _inchange_semiconductor

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2SB14

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1411 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -1A) ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -1A, IBB= -2mA) APPLICATIONS ·High power switching applications. ·Hammer d

1.75. 2sb1478.pdf Size:224K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1478 DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= -2A ·Low Collector Saturation Voltage- : VCE(sat) = -2.0V(Max.) @IC= 5A ·Complement to Type 2SD2237 APPLICATIONS ·Designed for power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAME

1.76. 2sb1402.pdf Size:229K _inchange_semiconductor

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2SB14

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1402 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -1.5A) APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Co

1.77. 2sb1470.pdf Size:107K _inchange_semiconductor

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2SB14

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1470 DESCRIPTION ·With TO-3PL package ·Complement to type 2SD2222 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplification PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbo

1.78. 2sb1429.pdf Size:162K _inchange_semiconductor

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2SB14

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1429 DESCRIPTION Ў¤ With TO-3PL package Ў¤ Complement to type 2SD2155 APPLICATIONS Ў¤ Power amplifier applications Ў¤ Recommend for 100W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3P

1.79. 2sb1436.pdf Size:137K _inchange_semiconductor

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2SB14

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1436 DESCRIPTION · ·With TO-126 package ·Complement to type 2SD2166 ·Low collector saturation voltage APPLICATIONS ·For audio power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CON

1.80. 2sb1477.pdf Size:232K _inchange_semiconductor

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2SB14

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1477 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) ·Wide Area of Safe Operation ·Complement to Type 2SD2236 APPLICATIONS ·Designed for driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Volt

1.81. 2sb1454.pdf Size:230K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1454 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@ (IC= -3A, IBB= -0.3A) ·Complement to Type 2SD2202 APPLICATIONS ·Designed for high-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL

1.82. 2sb1455.pdf Size:178K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1455 DESCRIPTION Ў¤ With TO-220F package Ў¤ Complement to type 2SD2203 Ў¤ Low collector saturation voltage: Ў¤ Large current capacity APPLICATIONS Ў¤ High current power switching applications PINNING PIN 1 2 3 Emitter Collector Base Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absol

1.83. 2sb1490.pdf Size:233K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1490 DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= -6A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -6A ·Complement to Type 2SD2250 APPLICATIONS ·Designed for power amplifier applications ·Optimum for 80W HiFi output applications. ABSOLUTE MAXIMUM

1.84. 2sb1440.pdf Size:219K _htsemi

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2SB1 440 TRANSISTOR(PNP) SOT-89 1. BASE FEATURES Low collector-emitter saturation voltage VCE(sat) 2. COLLECTOR 1 For low-frequency output amplification 2 Complementary to 2SD2185 3. EMITTER 3 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Vol

1.85. 2sb1424.pdf Size:254K _htsemi

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2SB1 424 TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR ? Excellent DC Current Gain ? Low Collector-emitter saturation voltage 3. EMITTER ? Complement the 2SD2150 MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -20 V V Collector-Emitter Voltage -20 V CEO VEBO Emitter-Base Voltage -6 V I Collector Current -

1.86. 2sb1412.pdf Size:255K _lge

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2SB1412(PNP) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Power amplifier applications MAXIMUM RATINGS (TA=25? unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current –Continuous -5 A PC Collector Pow

1.87. 2sb1440 sot-89.pdf Size:197K _lge

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2SB1440 SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 1.6 2 1.8 1.4 1.4 3. EMITTER 3 2.6 4.25 Features 2.4 3.75 0.8 Low collector-emitter saturation voltage VCE(sat) MIN 0.53 0.40 For low-frequency output amplification 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 Complementary to 2SD2185 3.0 MAXIMUM RATINGS (TA=25? unless otherwise noted) Dime

1.88. 2sb1424.pdf Size:255K _wietron

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2SB1424 Epitaxial Planar PNP Transistors SOT-89 P b Lead(Pb)-Free 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER % C ABSOLUTE MAXIMUM RATINGS (Ta=25 ) Rating Symbol Limits Unit Vdc Collector-Base Voltage V -20 CBO Vdc Collector-Emitter Voltage -20 VCEO Vdc Emitter-Base Voltage -6 VEBO I A(DC) -3 C Collector Current ICP -5 A (Pulse)* PD 0.6 W Collector Power Dissipation % Ju

1.89. 2sb1412.pdf Size:249K _wietron

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2SB1412 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1.BASE 3 2.COLLECTOR 2 3.EMITTER 1 Features: * Excellent DC Current Gain Characteristics D-PAK(TO-252) * Low VCE(Sat) Mechanical Data: * Case : Molded Plastic * Weight : 0.925 grams ABSOLUTE MAXIMUM RATINGS(TA=25?C) Rating Symbol Value Unit VCBO -30 V Collector to Base Voltage VCEO -20 V Collector to Emitter Voltage V

1.90. 2sb1440.pdf Size:498K _willas

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FM120-M WILLAS 2SB1440THRU SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. TRANSISTOR (PNP) SOD-123H • Low profile surface mounted application in

1.91. 2sb1426.pdf Size:419K _blue-rocket-elect

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2SB1426(BR3CG1426) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-92 Plastic Package. 特征 / Features 饱和压降低。 Low saturation voltage. 用途 / Applications 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 1 2 3 PIN1:Base PIN 2:Collector PIN 3:Emitter 放大及

1.92. 2sb1440.pdf Size:871K _kexin

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SMD Type Transistors PNP Transistors 2SB1440 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=-2A ● Collector Emitter Voltage VCEO=-50V ● Complementary to 2SD2185 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO

1.93. 2sb1424.pdf Size:1168K _kexin

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SMD Type Transistors PNP Transistors 2SB1424 1.70 0.1 ■ Features ● Excellent DC current gain ● Low collector-emitter saturation voltage ● Complementary to 2SD2150 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -20 V Emitter - Base

1.94. 2sb1412.pdf Size:1550K _kexin

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SMD Type Transistors PNP Transistors 2SB1412 TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 ■ Features +0.2 5.30-0.2 +0.8 0.50 -0.7 ● Excellent DC current gain characteristics ● Low VCE(SAT) VCE(SAT)= -0.35V (Typ) 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbo

1.95. 2sb1475.pdf Size:1107K _kexin

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SMD Type Transistors PNP Transistors 2SB1475 ■ Features ● Super Miniature Package ● Low collector-emitter saturation voltage ● High DC Current 1 Base 2 Emitter 3 Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -16 V Emitter - Base Voltage VEBO -6 Collector Current - Co

1.96. 2sb1407s.pdf Size:875K _kexin

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SMD Type Transistors PNP Transistors 2SB1407S TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 ■ Features +0.2 5.30-0.2 +0.8 0.50 -0.7 ● Low frequency power amplifier ● Complementary to 2SD2121 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collecto

1.97. 2sb1427.pdf Size:830K _kexin

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SMD Type Transistors PNP Transistors 2SB1427 1.70 0.1 ■ Features ● Low saturation voltage, ● Excellent DC current gain characteristics. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage VEBO -6 Collector Cu

Datasheet: 2SB1392C , 2SB1393 , 2SB1394 , 2SB1395 , 2SB1396 , 2SB1397 , 2SB1398 , 2SB1399 , S9014 , 2SB140 , 2SB1400 , 2SB1401 , 2SB1402 , 2SB1403 , 2SB1404 , 2SB1405 , 2SB1406 .

 


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