2SB14 Datasheet and Replacement

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Ordering number:EN3470PNP Epitaxial Planar Silicon Darlington Transistor2SB1406Driver ApplicationsApplications Package Dimensions Relay drivers, hammer drivers, lamp drivers, motorunit:mmdrivers.2064[2SB1406]Features Darlington connection. High DC current gain. Large current capacity.E : EmitterC : CollectorB : BaseSANYO : NMPSpecificationsAbsol

Ordering number:EN3236PNP Epitaxial Planar Silicon Transistor2SB1405General Driver ApplicationsFeatures Package Dimensions Darlington connection.unit:mm High DC current gain.2064 Large current capacity, wide ASO.[2SB1405]E : EmitterC : CollectorB : BaseSANYO : NMPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings Un

DATA SHEETSILICON TRANSISTOR2SB1453PNP SILICON EPITAXIAL POWER TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SB1453 is a power transistor that can directly drive from PACKAGE DRAWING (UNIT: mm)the IC output. This transistor is ideal for motor drivers and solenoiddrivers in such as OA and FA equipment.In addition, a small resin-molded insulation type packagecontributes to high-density

DATA SHEETSILICON POWER TRANSISTOR2SB1430PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SB1430 is a Darlington power transistor that can directly PACKAGE DRAWING (UNIT: mm)drive from the IC output. This transistor is ideal for motor driversand solenoid drivers in such as OA and FA equipment.In addition, this

DATA SHEETSILICON POWER TRANSISTOR2SB1432PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SB1432 is a Darlington power transistor that can be directly ORDERING INFORMATIONdriven from the output of an IC. This transistor is ideal for OA and FAPart No. Packageequipment such as motor and solenoid drivers.2SB143

PRELIMINARY DATA SHEETDARLINGTON POWER TRANSISTOR2SB1465PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SB1465 is a mold power transistor developed for low- PACKAGE DRAWING (UNIT: mm)frequency power amplifier and low-speed switching. This transistoris ideal for use in a direct drive from IC output to relay driv

2SB1427 Transistors Power transistor (-20V, -2A) 2SB1427 External dimensions (Unit : mm) Features 1) Low saturation voltage, 4.0VCE : Max . -0.5V at IC/IB = -1A / -50mA. 1.0 2.5 0.52) Excellent DC current gain characteristics. (1)(2)(3)(1) Base(2) Collector(3) Emitter ROHM : MPT3EIAJ : SC-62 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Un

2SA1797 / 2SB1443 Transistors Power Transistor (-50V, -2A) 2SA1797 / 2SB1443 Features 1) Low saturation voltage. VCE (sat) = -0.35V (Max.) at IC / IB = -1A / -50mA. 2) Excellent DC current gain characteristics. 4) Complements the 2SA1797 and 2SC4672. Absolute maximum ratings (Ta=25C) Parameter Symbol Limits UnitCollector-base voltage VCBO -50 VCollector-emitter voltage

Power Transistor (-50V, -2A) 2SB1443 Features Dimensions (Unit : mm) 1) Low saturation voltage. ATVVCE (sat) = -0.35V (Max.) at IC / IB = -1A / 50mA. 2) Excellent DC current gain characteristics. Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit (1) (2) (3)(1) (2) (3)(1) EmitterCollector-base voltage VCBO -50 V(2) CollectorCollector-emitter

2SB1474TransistorPower Transistor (-80V, -4A)2SB1474 Features External dimensions (Units : mm)1) Darlington connection for a high hFE.2) Built-in resistor between base and emitter.5.5 1.53) Built-in damper doide.0.9C0.5 Absolute maximum ratings (Ta=25C) 0.8Min.(1) Base(Gate)1.52.5 (2) Collector(Drain)ROHM : CPT39.5Parameter Symbol Limits Unit (3) Emitter(Sour

2SA1797 / 2SB1443TransistorsTransistors2SC4672(96-100-B208)(96-181-D208)291

2SB1424 / 2SA1585S Transistors Low VCE(sat) Transistor (-20V, -3A) 2SB1424 / 2SA1585S External dimensions (Unit : mm) Features 1) Low VCE(sat). 2SB1424 2SA1585SVCE(sat) = -0.2V (Typ.) 40.2 20.24.5+0.2(IC/IB = -2A / -0.1A) -0.11.50.11.60.12) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. 0.45+0.15(1) (2) (3)-0.05

TransistorsLow VCE(sat) Transistor (*20V, *3A)2SB1424 / 2SA1585SFFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = *0.2V (Typ.)(IC/IB = *2A / *0.1A)2) Excellent DC current gain charac-teristics.3) Complements the 2SD2150 /2SC4115S.FStructureEpitaxial planar typePNP silicon transistorFAbsolute maximum ratings (Ta = 25_C)(96-596-A74)201Transist

2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor (-20V, -5A) 2SB1386 / 2SB1412 / 2SB1326 External dimensions (Unit : mm) Features 1) Low VCE(sat). 2SB1386 2SB1412VCE(sat) = -0.35V (Typ.) 2.3+0.26.50.2-0.14.5+0.2C0.5-0.15.1+0.21.5+0.2 -0.1 0.50.1(IC/IB = -4A / -0.1A) 1.60.1 -0.12) Excellent DC current gain characteristics. 3) Compleme

Transistor2SB1446Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD21792.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).Allowing supply with the radial taping.0.65 max.+0.1 Absolute Maximum Ratings (Ta=25C) 0.450.052.5 0.5 2.5 0.5Parameter Symbo

Transistor2SB1488Silicon PNP triple diffusion planer typeUnit: mmFor power switching 2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8Features 0.65 max.High foward current transfer ratio hFE.High-speed switching.High collector to base voltage VCBO.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Ratings (Ta=25C) 1 2 3

Transistor2SB1462Silicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SD22161.6 0.150.4 0.8 0.1 0.4FeaturesHigh foward current transfer ratio hFE.1SS-Mini type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-3zine packing.2Absolute Maximum Ratings (Ta=25C)Parameter S

Transistors2SB1434Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mm6.90.1 2.50.1Complementary to 2SD21770.7 4.0 (0.8) Features Low collector-emitter saturation voltage VCE(sat)0.65 max. Allowing supply with the radial taping Absolute Maximum Ratings Ta = 25CParameter Symbol Rating UnitCollector-base voltage (Emitter ope

Power Transistors2SB1493Silicon PNP epitaxial planar type DarlingtonFor power amplificationUnit: mmComplementary to 2SD225515.0 0.5 4.5 0.213.0 0.510.5 0.5 2.0 0.1FeaturesOptimum for 60W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000 3.2 0.1Low collector to emitter saturation voltage VCE(sat):

Transistors2SB1462Silicon PNP epitaxial planar typeFor general amplificationUnit: mm0.2+0.1 0.15+0.1Complementary to 2SD22160.05 0.053 Features High forward current transfer ratio hFE SS-Mini type package allowing downsizing of the equipment andautomatic insertion through the tape packing1 2(0.5) (0.5)1.00.11.60.15 Absolute Maximum Rat

Transistor2SB1446Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD21792.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).Allowing supply with the radial taping.0.65 max.+0.1 Absolute Maximum Ratings (Ta=25C) 0.450.052.5 0.5 2.5 0.5Parameter Symbo

Transistor2SB1463Silicon PNP epitaxial planer typeFor high breakdown voltage low-noise amplificationUnit: mmComplementary to 2SD22401.6 0.150.4 0.8 0.1 0.4FeaturesHigh collector to emitter voltage VCEO.1Low noise voltage NV.SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing and the maga-zine packing.2

Power Transistors2SB1414Silicon PNP epitaxial planar typeFor low-frequency driver/high power amplificationUnit: mm7.50.2 4.50.2Complementary to 2SD2134 Features Excellent current IC characteristics of forward current transfer ratio0.650.1 0.850.10.8 C 0.8 C1.00.1hFE vs. collector High transition frequency fT0.70.1 Allowing automatic insertio

Power Transistors2SB1490Silicon PNP epitaxial planar type darlingtonUnit: mm20.00.5 5.00.3For power amplification(3.0)Complementary to 2SD2250 3.30.2 Features Optimum for 80 W HiFi output(1.5) High forward current transfer ratio hFE(1.5) Low collector-emitter saturation voltage VCE(sat) 2.00.32.70.33.00.31.00.20.60.2 Absolute

Power Transistors2SB1470Silicon PNP triple diffusion planar type darlingtonUnit: mm20.00.5 5.00.3For power amplification(3.0)Complementary to 2SD2222 3.30.2 Features Optimum for 120 W HiFi output(1.5) High forward current transfer ratio hFE(1.5) Low collector-emitter saturation voltage VCE(sat) 2.00.32.70.33.00.31.00.20.60.2

Power Transistors2SB1435Silicon PNP epitaxial planar typeFor low-frequency output amplificationUnit: mm7.50.2 4.50.2 Features Low collector-emitter saturation voltage VCE(sat) Large collector current IC0.650.1 0.850.10.8 C 0.8 C Allowing automatic insertion with radial taping 1.00.10.70.10.70.11.150.2 Absolute Maximum Ratings Ta = 25

Transistor2SB1438Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).High collector to emitter voltage VCEO.0.65 max.Allowing supply with the radial taping.+0.1 0.450.05Absolute Maximum Ratings (Ta=25C)2.5 0.5 2.5 0.5

Transistor2SB1473Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to2SD22252.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to emitter voltage VCEO.Satisfactory linearity of forward current transfer ratio hFE.0.65 max.High transition frequency fT.Allowing supply with the radial taping.+0.1 0.45

Transistor2SB1440Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD21851.5 0.14.5 0.1Features1.6 0.2Low collector to emitter saturation voltage VCE(sat).Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-45zine packing.0.4 0.080.4 0

Power Transistors2SB1418, 2SB1418ASilicon PNP epitaxial planar type DarlingtonUnit: mmFor power amplificationComplementary to 2SD2138 and 2SD2138A5.0 0.110.0 0.2 1.0Features High foward current transfer ratio hFE 90 High-speed switching Allowing automatic insertion with radial taping 1.2 0.1 C1.02.25 0.20.65 0.1Absolute Maximum Ratings (TC=25C)0.35

Power Transistors2SB1417, 2SB1417ASilicon PNP epitaxial planar typeFor power amplificationComplementary to 2SD2137 and 2SD2137AUnit: mmFeatures High forward current transfer ratio hFE which has satisfactory linearity5.0 0.1 Low collector to emitter saturation voltage VCE(sat)10.0 0.2 1.0 Allowing automatic insertion with radial taping90Absolute Maximum Ratings (T

Transistors2SB1440Silicon PNP epitaxial planar typeUnit: mmFor low-frequency output amplification4.50.11.60.2 1.50.1Complementary to 2SD2185 Features Low collector-emitter saturation voltage VCE(sat)1 230.40.08 0.50.08 0.40.04 Mini Power type package, allowing downsizing of the equipment1.50.1and automatic insertion through the tape packing and

Power Transistors2SB1416Silicon PNP epitaxial planar typeFor low-frequency power amplificationUnit: mm7.50.2 4.50.2Complementary to 2SD2136 Features High forward current transfer ratio hFE which has satisfactory0.650.1 0.850.10.8 C 0.8 C1.00.1linearity Low collector-emitter saturation voltage VCE(sat)0.70.1 Allowing automatic insertion with

Transistor2SB1462JSilicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SD2216J1.60 0.050.80 0.80 0.050.425 0.425FeaturesHigh foward current transfer ratio hFE.SS-Mini type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing.+0.05Absolute Maximum Ratings (Ta=25C)

Transistor2SB1488Silicon PNP triple diffusion planer typeUnit: mmFor power switching 2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8Features 0.65 max.High foward current transfer ratio hFE.High-speed switching.High collector to base voltage VCBO.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Ratings (Ta=25C) 1 2 3

Power Transistors2SD2254Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm 3.3 0.2Complementary to 2SB149220.0 0.5 5.0 0.33.0FeaturesOptimum for 60W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):

Transistors2SB1463Silicon PNP epitaxial planar typeUnit: mmFor high breakdown voltage low-frequency amplification0.2+0.1 0.15+0.10.05 0.05Complementary to 2SD22403 Features High collector-emitter voltage (Base open) VCEO Low noise voltage NV1 2(0.5) (0.5) SS-Mini type package, allowing downsizing of the equipment and1.00.1automatic insertion t

Transistor2SB1434Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD21772.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).Allowing supply with the radial taping.0.65 max.+0.1 Absolute Maximum Ratings (Ta=25C) 0.450.052.5 0.5 2.5 0.5Parameter Sym

Transistors2SB1438Silicon PNP epitaxial planar typeFor low-frequency power amplification Unit: mm6.90.1 2.50.10.7 4.0 (0.8) Features Low collector-emitter saturation voltage VCE(sat) Large collector-emitter voltage (Base open) VCEO0.65 max. Allowing supply with the radial taping Absolute Maximum Ratings Ta = 25CParameter Symbol Rating UnitCollector

UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing

UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

2SB1401Silicon PNP Triple DiffusedADE-208-875 (Z)1st. EditionSep. 2000ApplicationLow frequency power amplifierOutlineTO-220FM211. Base2. Collector3. Emitter12 55 k3(Typ)32SB1401Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 300 VCollector to emitter voltage VCEO 300 VEmitter to base voltage VE

2SB1400Silicon PNP EpitaxialApplicationLow frequency power amplifierOutlineTO-220FM211. Base2. Collector3. Emitter12 1 k 400 3(Typ) (Typ)32SB1400Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7 VCollector current IC

2SB1494Silicon PNP Triple DiffusedApplicationLow frequency power amplifier complementary Pair with 2SD2256OutlineTO-3P211. BaseID2. Collector(Flange)3. Emitter13232SB1494Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7 VCol

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1436 DESCRIPTION With TO-126 package Complement to type 2SD2166 Low collector saturation voltage APPLICATIONS For audio power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CO

2SB1424PNP Silicon Elektronische BauelementeMedium Power TransistorRoHS Compliant ProductDA suffix of "-C" specifies halogen & lead-freeD1A b1 1.BASE SOT-892.COLLECTORb Ce3. EMITTERe1FEATURESDimensions In Millimeters Dimensions In InchesSymbolMin Max Min MaxA 1.400 1.600 0.055 0.063 Power dissipationb 0.320 0.520 0.013 0.020b1 0.36

2SB1440 -2 A, -50 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 Low collector-emitter saturation voltage VCE(sat) For low-frequency output amplification B 1 C 2 Complements to 2SD2185 E 3AECPACKAGE INFORMATION Package MPQ LeaderSize B D

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1424 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Excellent DC current gain Low collector-emitter saturation voltage 3. EMITTER Complement the 2SD2150 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1440 TRANSISTOR (PNP) 1. BASE FEATURES Low collector-emitter saturation voltage VCE(sat) 2. COLLECTOR 1 For low-frequency output amplification 2 Complementary to 2SD2185 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Para meter V

JMnic Product SpecificationSilicon PNP Power Transistors 2SB1455 DESCRIPTION With TO-220F package Complement to type 2SD2203 Low collector saturation voltage: Large current capacity APPLICATIONS High current power switching applications PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 BaseAbsolute maximum ratings

JMnic Product Specification Silicon PNP Power Transistors 2SB1429 DESCRIPTION With TO-3PL package Complement to type 2SD2155 APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3

E(2k) (80)BDarlington 2SB1420Equivalent circuitCSilicon PNP Epitaxial Planar TransistorApplication : Chopper Regulator, DC Motor Driver and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0.24.80.415.6VCBO 120 V ICBO VCB=120V

SHINDENGENDarlington TransistorOUTLINE DIMENSIONS2SB1448 Case : ITO-3P(TP15J10)-15A PNPRATINGSUnit : mm

2SB1 424TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Excellent DC Current Gain Low Collector-emitter saturation voltage 3. EMITTER Complement the 2SD2150 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -20 V V Collector-Emitter Voltage -20 V CEOVEBO Emitter-Base Voltage -6 V I Collecto

2SB1 440TRANSISTOR(PNP)SOT-89 1. BASE FEATURES Low collector-emitter saturation voltage VCE(sat) 2. COLLECTOR 1 For low-frequency output amplification 2 Complementary to 2SD2185 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Bas

2SB1412(PNP) TO-251/TO-252-2L TransistorTO-2511.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Power amplifier applications MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2LSymbol Parameter Value UnitsVCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current Continuous -5 A PC Collector Po

2SB1440 SOT-89 Transistor(PNP)1. BASE SOT-892. COLLECTOR 1 4.6B4.41.62 1.81.41.43. EMITTER 3 2.64.25Features2.43.75 0.8 Low collector-emitter saturation voltage VCE(sat) MIN0.53 0.40For low-frequency output amplification 0.480.442x)0.13 B0.35 0.371.5 Complementary to 2SD2185 3.0MAXIMUM RATINGS (TA=25 unless otherwise noted)

2SB1412PNP EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1.BASE32.COLLECTOR23.EMITTER 1Features:* Excellent DC Current Gain CharacteristicsD-PAK(TO-252)* Low VCE(Sat)Mechanical Data:* Case : Molded Plastic* Weight : 0.925 gramsABSOLUTE MAXIMUM RATINGS(TA=25C)Rating Symbol Value UnitVCBO-30 VCollector to Base VoltageVCEO-20 VCollector to Emitter Voltag

2SB1424Epitaxial Planar PNP TransistorsSOT-89P b Lead(Pb)-Free121. BASE32. COLLECTOR3. EMITTER%CABSOLUTE MAXIMUM RATINGS (Ta=25 )Rating SymbolLimits UnitVdcCollector-Base VoltageV -20CBOVdcCollector-Emitter Voltage -20VCEOVdcEmitter-Base Voltage -6VEBOI A(DC)-3CCollector CurrentICP -5 A (Pulse)*PD 0.6 WCollector Power Dissipation%

FM120-M WILLAS2SB1440THRUSOT-89 Plastic-Encapsulate TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.TRANSISTOR (PNP) SOD-123H Low profile surface mounted application

2SB1426(BR3CG1426) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features Low saturation voltage. / Applications / Equivalent Circuit / Pinning 1 2 3 PIN1Base PIN 2Collector PIN 3Emitter

2SB1424 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features Low VCE(sat),excellent DC current gain characteristics. / Applications General purpose amplifier.

SMD Type TransistorsPNP Transistors2SB1412TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1 Features+0.25.30-0.2 +0.80.50 -0.7 Excellent DC current gain characteristics Low VCE(SAT) VCE(SAT)= -0.35V (Typ)0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbo

SMD Type TransistorsPNP Transistors2SB14271.70 0.1 Features Low saturation voltage, Excellent DC current gain characteristics.0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage VEBO -6 Collector Cu

SMD Type TransistorsPNP Transistors2SB14241.70 0.1 Features Excellent DC current gain Low collector-emitter saturation voltage Complementary to 2SD21500.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -20 V Emitter - Base

SMD Type TransistorsPNP Transistors2SB1440SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-50V Complementary to 2SD21850.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO

SMD Type TransistorsLow Frequency Transistor2SB1412TO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7FeaturesLow VCE(sat).PNP silicon transistor.0.127+0.1 max0.80-0.1+0.12.3 0.60-0.11 Base+0.154.60-0.152 Collector3 EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -30 VCollector-emit

SMD Type TransistorsPNP Transistors2SB1475 Features Super Miniature Package Low collector-emitter saturation voltage High DC Current1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -16 V Emitter - Base Voltage VEBO -6 Collector Current - Co

SMD Type TransistorsPNP Transistors2SB1407STO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1 Features+0.25.30-0.2 +0.80.50 -0.7 Low frequency power amplifier Complementary to 2SD21210.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto

SMD Type TransistorsLow Frequency Transistor2SB1412TO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7FeaturesLow VCE(sat).PNP silicon transistor.0.127+0.1 max0.80-0.1+0.12.3 0.60-0.11 Base+0.154.60-0.152 Collector3 EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -30 VCollector-emit

SMD Type TransistorsLow Frequency Transistor2SB1412TO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7FeaturesLow VCE(sat).PNP silicon transistor.0.127+0.1 max0.80-0.1+0.12.3 0.60-0.11 Base+0.154.60-0.152 Collector3 EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -30 VCollector-emit

2SB1412(3CA1412) PNP /SILICON PNP TRANSISTOR Purpose: Medium power amplifier applications. :, 2SD2118(3DG2118) Features: Low V ,excellent DC current gain characteristics, complements the 2SD2118(3DG2118). CE(sat)/Absolute maximum ratings(Ta=25)

isc Silicon PNP Power Transistor 2SB1477DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min.)(BR)CEOWide Area of Safe OperationComplement to Type 2SD2236Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for driver and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

isc Silicon PNP Darlington Power Transistor 2SB1404DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -1.5A)FE CE CMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon PNP Power Transistor 2SB1412DESCRIPTIONLow collector-to-emitter saturation voltage: V = -1.0V(Max)@I = -4ACE(sat) CFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collec

isc Silicon PNP Darlington Power Transistor 2SB1478DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = -2AFE CLow Collector Saturation Voltage-: V = -2.0V(Max.) @I = 5ACE(sat) CComplement to Type 2SD2237Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power linear and switching applications.ABSOLUTE MA

isc Silicon PNP Darlington Power Transistor 2SB1481DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = -2V, I = -1.5A)FE CE CLow Collector Saturation Voltage-: V = -1.5V(Max)@ (I = -3A)CE(sat) CComplement to Type 2SD2241Minimum Lot-to-Lot variations for robust deviceperformance and reliable operatio

isc Silic\on PNP Darlington Power Transistor 2SB1431DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = -2V, I = -3A)FE CE CLow Collector Saturation Voltage-: V = -1.5V(Max)@ (I = -3A, I = -3mA)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

isc Silicon PNP Darlington Power Transistor 2SB1402DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -1.5A)FE CE CMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon PNP Darlington Power Transistor 2SB1492DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -5AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -5ACE(sat) CComplement to Type 2SD2254Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Optimum for 60W HiFi

isc Silicon PNP Darlington Power Transistor 2SB1490DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -6AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -6ACE(sat) CComplement to Type 2SD2250Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsOptimum for 80W HiFi o

isc Silicon PNP Darlington Power Transistor 2SB1430DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = -2V, I = -2A)FE CE CLow Collector Saturation Voltage-: V = -1.5V(Max)@ (I = -2A, I = -2mA)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSD

isc Silicon PNP Power Transistor 2SB1455DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -0.5V(Max)@ (I = -4A, I = -0.4A)CE(sat) C BComplement to Type 2SD2203Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-current switching applications.AB

isc Silicon PNP Darlington Power Transistor 2SB1470DESCRIPTIONHigh forward current transfer ratio hFELow collector to emitter saturation voltage VCE(sat)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplificationOptimum for 120W HiFi output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

isc Silicon PNP Power Transistors 2SB1436DESCRIPTIONLow Collector Saturation VoltageHigh Power Dissipation-: P = 5W(Max)@T =25C CComplement to Type 2SD2166Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in output stage of audio amplifier,voltage regulator, DC-DC converter and relay driver.ABSOLUTE

isc Silicon PNP Power Transistor 2SB1421DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SD2140Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.Optimum for the output stage of a HiFi audio amplifierABSOLUTE MAX

isc Silicon PNP Darlington Power Transistor 2SB1420DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@I = -8AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDriver for chopper regulator, DC motor driver and generalpurpose applications.ABSOLUTE MAXIMUM RATING

isc Silicon PNP Power Transistor 2SB1454DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -0.5V(Max)@ (I = -3A, I = -0.3A)CE(sat) C BComplement to Type 2SD2202Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-current switching applications.AB

isc Silicon PNP Power Transistor 2SB1419DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsOptimum for the output stage of a HiFi audio amplifierABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER

isc Silicon PNP Darlington Power Transistor 2SB1400DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -120V(Min)CEO(SUS)High DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -3A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon PNP Power Transistor 2SB1468DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -30V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -0.5V(Max)@ (I = -5A, I = -0.25A)CE(sat) C BComplement to Type 2SD2219Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed inverters,converters.ABSOL

isc Silicon PNP Darlington Power Transistor 2SB1495DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ (V = -2V, I = -2A)FE CE CLow-Collector Saturation Voltage-: V = -1.5V(Max.)@I = -1.5ACE(sat) CComplement to Type 2SD2257Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power switching applications.A

isc Silicon PNP Darlington Power Transistor 2SB1411DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 1500(Min)@ (V = -3V, I = -1A)FE CE CLow Collector Saturation Voltage-: V = -1.5V(Max)@ (I = -1A, I = -2mA)CE(sat) C BMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSH

isc Silicon PNP Darlington Power Transistor 2SB1403DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -120V(Min)CEO(SUS)High DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -3A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon PNP Power Transistor 2SB1429DESCRIPTIONHigh Current CapabilityHigh Power DissipationCollector-Emitter Breakdown Voltage-: V = -180V(Min)(BR)CEOComplement to Type 2SD2155Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency amplifie