2SB1432 PDF Specs and Replacement
Type Designator: 2SB1432
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30
W
Maximum Collector-Base Voltage |Vcb|: 100
V
Maximum Collector-Emitter Voltage |Vce|: 100
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 10
A
Max. Operating Junction Temperature (Tj): 175
°C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package:
TO220
-
BJT ⓘ Cross-Reference Search
2SB1432 PDF detailed specifications
..1. Size:106K nec
2sb1432.pdf 

DATA SHEET SILICON POWER TRANSISTOR 2SB1432 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1432 is a Darlington power transistor that can be directly ORDERING INFORMATION driven from the output of an IC. This transistor is ideal for OA and FA Part No. Package equipment such as motor and solenoid drivers. 2SB143... See More ⇒
8.1. Size:231K 1
2sb1437.pdf 

/ e c d cle stage. n e a u n n i e t t n n i o a c maintenance type s planed maintenance type M i discontinued type planed discontinued typed D Maintenance/Discontinued includes following four Product lifecy http //www.semicon.panasonic.co.jp/en/ Please visit following URL about latest information. / e c d cle stage. n e a u n n i e t t n n i o... See More ⇒
8.2. Size:115K nec
2sb1430.pdf 

DATA SHEET SILICON POWER TRANSISTOR 2SB1430 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1430 is a Darlington power transistor that can directly PACKAGE DRAWING (UNIT mm) drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, this... See More ⇒
8.3. Size:78K panasonic
2sb1434.pdf 

Transistors 2SB1434 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm 6.9 0.1 2.5 0.1 Complementary to 2SD2177 0.7 4.0 (0.8) Features Low collector-emitter saturation voltage VCE(sat) 0.65 max. Allowing supply with the radial taping Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Collector-base voltage (Emitter ope... See More ⇒
8.5. Size:44K panasonic
2sb1438 e.pdf 

Transistor 2SB1438 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 Absolute Maximum Ratings (Ta=25 C) 2.5 0.5 2.5 0.5 ... See More ⇒
8.6. Size:43K panasonic
2sb1434 e.pdf 

Transistor 2SB1434 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD2177 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.65 max. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0.05 2.5 0.5 2.5 0.5 Parameter Sym... See More ⇒
8.7. Size:79K panasonic
2sb1438.pdf 

Transistors 2SB1438 Silicon PNP epitaxial planar type For low-frequency power amplification Unit mm 6.9 0.1 2.5 0.1 0.7 4.0 (0.8) Features Low collector-emitter saturation voltage VCE(sat) Large collector-emitter voltage (Base open) VCEO 0.65 max. Allowing supply with the radial taping Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Collector... See More ⇒
8.8. Size:95K savantic
2sb1436.pdf 

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1436 DESCRIPTION With TO-126 package Complement to type 2SD2166 Low collector saturation voltage APPLICATIONS For audio power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CO... See More ⇒
8.9. Size:237K inchange semiconductor
2sb1431.pdf 

isc Silic on PNP Darlington Power Transistor 2SB1431 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = -2V, I = -3A) FE CE C Low Collector Saturation Voltage- V = -1.5V(Max)@ (I = -3A, I = -3mA) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ... See More ⇒
8.10. Size:219K inchange semiconductor
2sb1430.pdf 

isc Silicon PNP Darlington Power Transistor 2SB1430 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = -2V, I = -2A) FE CE C Low Collector Saturation Voltage- V = -1.5V(Max)@ (I = -2A, I = -2mA) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS D... See More ⇒
8.11. Size:209K inchange semiconductor
2sb1436.pdf 

isc Silicon PNP Power Transistors 2SB1436 DESCRIPTION Low Collector Saturation Voltage High Power Dissipation- P = 5W(Max)@T =25 C C Complement to Type 2SD2166 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in output stage of audio amplifier, voltage regulator, DC-DC converter and relay driver. ABSOLUTE... See More ⇒
Detailed specifications: 2SB1419
, 2SB142
, 2SB1421
, 2SB1422
, 2SB1429
, 2SB143
, 2SB1430
, 2SB1431
, 2SC2625
, 2SB1434
, 2SB1435
, 2SB1437
, 2SB1438
, 2SB1439
, 2SB143P
, 2SB144
, 2SB1447
.
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