2SB1463 Datasheet. Specs and Replacement
Type Designator: 2SB1463 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 165 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 120
Package: TO236
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2SB1463 Substitution
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2SB1463 datasheet
Transistor 2SB1463 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Unit mm Complementary to 2SD2240 1.6 0.15 0.4 0.8 0.1 0.4 Features High collector to emitter voltage VCEO. 1 Low noise voltage NV. SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing and the maga- zine packing. 2 ... See More ⇒
Transistors 2SB1463 Silicon PNP epitaxial planar type Unit mm For high breakdown voltage low-frequency amplification 0.2+0.1 0.15+0.1 0.05 0.05 Complementary to 2SD2240 3 Features High collector-emitter voltage (Base open) VCEO Low noise voltage NV 1 2 (0.5) (0.5) SS-Mini type package, allowing downsizing of the equipment and 1.0 0.1 automatic insertion t... See More ⇒
PRELIMINARY DATA SHEET DARLINGTON POWER TRANSISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power transistor developed for low- PACKAGE DRAWING (UNIT mm) frequency power amplifier and low-speed switching. This transistor is ideal for use in a direct drive from IC output to relay driv... See More ⇒
Detailed specifications: 2SB1451, 2SB1452, 2SB1454, 2SB1455, 2SB1456, 2SB1457, 2SB146, 2SB1462, BC549, 2SB1464, 2SB1466, 2SB147, 2SB1473, 2SB148, 2SB1481, 2SB1488, 2SB1489
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