2SB152
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB152
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 50
W
Maximum Collector-Base Voltage |Vcb|: 100
V
Maximum Collector-Emitter Voltage |Vce|: 80
V
Maximum Emitter-Base Voltage |Veb|: 60
V
Maximum Collector Current |Ic max|: 5
A
Max. Operating Junction Temperature (Tj): 85
°C
Transition Frequency (ft): 0.2
MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package:
TO3
2SB152
Transistor Equivalent Substitute - Cross-Reference Search
2SB152
Datasheet (PDF)
0.1. Size:72K sanyo
2sb1527.pdf
Ordering number:EN4667PNP Epitaxial Planar Silicon Transistors2SB1527Compact Motor Driver ApplicationsFeatures Package Dimensions Low saturation voltage.unit:mm Contains a diode between collector and emitter.2018B Contains a bias resistor between base and emitter.[2SB1527] Large current capacity. Compact package making it easy to realize high-density, sm
0.2. Size:956K kexin
2sb1527.pdf
SMD Type TransistorsPNP Transistors2SB1527SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Large current capatance1 2 Low collector-emitter saturation voltage+0.10.95-0.1 0.1+0.05-0.01 Contains a bias resisror between base and emitter +0.11.9-0.1Collector1.Base Base2.EmitterRBE3.collectorEmitter Absolute Maximum Ratings Ta = 2
0.3. Size:989K kexin
2sb1527-3.pdf
SMD Type TransistorsPNP Transistors2SB1527SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features Large current capatance Low collector-emitter saturation voltage1 2+0.02+0.10.15 -0.020.95 -0.1 Contains a bias resisror between base and emitterCollector+0.11.9-0.2 Base1. Base2. EmitterRBE3. CollectorEmitter Absolute Maximum Rati
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