2SB1555 PDF and Equivalents Search

... See More ⇒

... See More ⇒

... See More ⇒

... See More ⇒

... See More ⇒

Power Transistors 2SB1553 Silicon PNP epitaxial planar type For power amplification Unit mm 5.0 0.1 Features 10.0 0.2 1.0 High foward current transfer ratio hFE 90 Satisfactory linearity of foward current transfer ratio hFE Allowing automatic insertion with radial taping 1.2 0.1 C1.0 2.25 0.2 Absolute Maximum Ratings (TC=25 C) 0.65 0.1 0.35 0.1 1.05 0.1 Param... See More ⇒

Power Transistors 2SB1554 Silicon PNP epitaxial planar type For power amplification Unit mm 5.0 0.1 Features 10.0 0.2 1.0 High forward current transfer ratio hFE which has satisfactory linearity 90 Allowing automatic insertion with radial taping 1.2 0.1 C1.0 Absolute Maximum Ratings (TC=25 C) 2.25 0.2 0.65 0.1 Parameter Symbol Ratings Unit 0.35 0.1 1.05 0.1 C... See More ⇒

JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1558 DESCRIPTION With TO-3PI package Complement to type 2SD2387 APPLICATIONS For power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PI) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER COND... See More ⇒

JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1559 DESCRIPTION With TO-3PN package Complement to type 2SD2389 APPLICATIONS Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER ... See More ⇒

E (70 ) B Darlington 2SB1559 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2389) Application Audio, Series Regulator and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Conditions Ratings Symbol Ratings Unit Unit 0.2 4.8 0.4 15.6 ICBO A VCBO 160 ... See More ⇒

isc Silicon PNP Darlington Power Transistor 2SB1558 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = -7A FE C Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -7A CE(sat) C Complement to Type 2SD2387 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATING... See More ⇒

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1559 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = -6A FE C Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -6A CE(sat) C Complement to Type 2SD2389 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio, series regulator and ge... See More ⇒

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1550 DESCRIPTION With TO-220C package High DC current gain DARLINGTON APPLICATIONS For medium speed and power switching applications PINNING PIN DESCRIPTION 1 Base Collector; connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE... See More ⇒

... See More ⇒

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1551 DESCRIPTION With TO-220Fa package High DC current gain DARLINGTON APPLICATIONS For medium speed and power switching applications PINNING PIN DESCRIPTION 1 Base Collector; connected to 2 mounting base Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ... See More ⇒