绝缘栅双极晶体管datasheet-PDF中文资料大全

 

BT30N60ANF 参数- 绝缘栅双极晶体管- IGBT- 目录- 参数- 数据表- PDF

制造商零件编号: BT30N60ANF

沟道类型: N-Channel

最大耗散功率 (Pc): 312

集电极--发射极击穿电压 (Uce): 600

集电极--发射极饱和压降 (Ucesat): 2.5

集电极 -栅极电压 (Ucg):

栅极-发射极最大电压 (Ueg): 20

在25 C的连续集电极电流 (Ic): 30

最大工作温度 (Tj), °C: 150

导通上升时间: 36

输出电容 (Cc), pF: 140

封装形式: TO3PN

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Silicon FS Planar IGBT R ○ BT30N60ANF General Description: VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 30 A technology, the 600V FSIGBT offers superior conduction and switching Ptot (TC=25℃) 312 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.0 V Features: FS Planar Technology, Positive temperature

其他IGBT晶体管 : FGW50N60VD(50G60VD) , FGW75N60H(75G60H) , FGW75N60HD(75G60HD) , FGW85N60RB(85G60RB) , 1MBH60-100 , FGL40N120AN , BRG15N120D , BRG20N120D , CT60AM-18F , SSIG15N135H , SSIG20N135H , BT25T120ANF , BT15T120ANF , BT15N120ANF , BT40N60BNF , BT30N60ANF , BT50N60ANF .

 


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绝缘栅双极晶体管IGBT BT15N60A9F | BT50N60ANF | BT30N60ANF | BT40N60BNF | BT15N120ANF | BT15T120ANF | BT25T120ANF | SSIG20N135H | SSIG15N135H | BRG25N120D |

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