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BT30N60ANF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BT30N60ANF

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 312

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vcesat): 2.5

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 30

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 36

Capacitancia de salida (Cc), pF: 140

Empaquetado / Estuche: TO3PN

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BT30N60ANF PDF doc:

1.1. bt30n60anf.pdf Size:103K _igbt_a

BT30N60ANF
BT30N60ANF

Silicon FS Planar IGBT R ○ BT30N60ANF General Description: VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 30 A technology, the 600V FSIGBT offers superior conduction and switching Ptot (TC=25℃) 312 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.0 V Features: FS Planar Technology, Positive temperature

1.2. bt30n60anf.pdf Size:105K _crhj

BT30N60ANF
BT30N60ANF

Silicon FS Planar IGBT R ○ BT30N60ANF General Description: VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 30 A technology, the 600V FSIGBT offers superior conduction and switching Ptot (TC=25℃) 312 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.0 V Features: FS Planar Technology, Positive temperature

Otros transistores... BRG20N120D , BRG25N120D , SSIG15N135H , SSIG20N135H , BT25T120ANF , BT15T120ANF , BT15N120ANF , BT40N60BNF , RJP30H1DPD , BT50N60ANF , BT15N60A9F , AP25G45EM , AP25G45GEM , AP28G45GEM , AP20G45EH , AP20G45EJ , TGPF30N40P .

 


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Introduzca al menos 2 números o letras