All IGBT. BT30N60ANF Datasheet

 

BT30N60ANF Datasheet and Replacement


   Type Designator: BT30N60ANF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 312 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 36 nS
   Coesⓘ - Output Capacitance, typ: 140 pF
   Qgⓘ - Total Gate Charge, typ: 90 nC
   Package: TO3P
      - IGBT Cross-Reference

 

BT30N60ANF Datasheet (PDF)

 ..1. Size:105K  crhj
 bt30n60anf.pdf pdf_icon

BT30N60ANF

Silicon FS Planar IGBT R BT30N60ANF General Description VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 30 A technology, the 600V FSIGBT offers superior conduction and switching Ptot TC=25 312 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.0 V Features FS Planar Technology, Positive temperature

 ..2. Size:103K  wuxi china
 bt30n60anf.pdf pdf_icon

BT30N60ANF

Silicon FS Planar IGBT R BT30N60ANF General Description VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 30 A technology, the 600V FSIGBT offers superior conduction and switching Ptot TC=25 312 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.0 V Features FS Planar Technology, Positive temperature

Datasheet: BRG20N120D , BRG25N120D , SSIG15N135H , SSIG20N135H , BT25T120ANF , BT15T120ANF , BT15N120ANF , BT40N60BNF , RJP30H2A , BT50N60ANF , BT15N60A9F , AP25G45EM , AP25G45GEM , AP28G45GEM , AP20G45EH , AP20G45EJ , TGPF30N40P .

History: IRG4PC40F

Keywords - BT30N60ANF transistor datasheet

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