All MOSFET. TK13E25D Datasheet

 

TK13E25D Datasheet and Replacement


   Type Designator: TK13E25D
   Marking Code: K13E25D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 102 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 25 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 66 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: SC46 TO220AB
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TK13E25D Datasheet (PDF)

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TK13E25D

TK13E25DMOSFETs Silicon N-Channel MOS (-MOS)TK13E25DTK13E25DTK13E25DTK13E25D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.19 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 250 V)(3) Enhancement mode: Vth =

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRL640 | PHP20NQ20T | IRF640N | IRFB5620 | IRFB4332

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