TK13E25D Specs and Replacement
Type Designator: TK13E25D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 102 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 66 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
TK13E25D substitution
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TK13E25D datasheet
tk13e25d.pdf
TK13E25D MOSFETs Silicon N-Channel MOS ( -MOS ) TK13E25D TK13E25D TK13E25D TK13E25D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.19 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 250 V) (3) Enhancement mode Vth =... See More ⇒
Detailed specifications: TK13A25D, TK13A45D, TK13A50DA, TK13A50D, TK13A55DA, TK13A60D, TK13A65D, TK13A65U, IRLZ44N, TK13J65U, TK13P25D, TK14A45DA, TK14A45D, TK14A55D, TK150F04K3, TK15A20D, TK15A50D
Keywords - TK13E25D MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: BLP03N10-P | AP2321GN-HF
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