All MOSFET. TK13E25D Datasheet

 

TK13E25D Datasheet and Replacement


   Type Designator: TK13E25D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 102 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 66 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: SC46 TO220AB
 

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TK13E25D Datasheet (PDF)

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TK13E25D

TK13E25DMOSFETs Silicon N-Channel MOS (-MOS)TK13E25DTK13E25DTK13E25DTK13E25D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.19 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 250 V)(3) Enhancement mode: Vth =

Datasheet: TK13A25D , TK13A45D , TK13A50DA , TK13A50D , TK13A55DA , TK13A60D , TK13A65D , TK13A65U , IRFP260N , TK13J65U , TK13P25D , TK14A45DA , TK14A45D , TK14A55D , TK150F04K3 , TK15A20D , TK15A50D .

History: IRF640NSPBF

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