All MOSFET. HIRF630 Datasheet

 

HIRF630 Datasheet and Replacement


   Type Designator: HIRF630
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 43 nC
   trⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO220AB
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HIRF630 Datasheet (PDF)

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HIRF630

Spec. No. : MOS200401HI-SINCERITYIssued Date : 2004.04.01Revised Date : 2005.04.22MICROELECTRONICS CORP.Page No. : 1/6HIRF630 Series Pin AssignmentHIRF630 / HIRF630FTabN-CHANNEL POWER MOSFET3-Lead Plastic TO-220ABPackage Code: EPin 1: GatePin 2 & Tab: DrainDescriptionPin 3: SourceThis power MOSFET is designed for low voltage, high speed powerswitching applicati

Datasheet: H50N03J , H6968CTS , H6968S , H8205 , H8205A , H9435S , H9926S , H9926TS , IRFB4110 , HIRF630F , HIRF730 , HIRF730F , HIRF740 , HIRF740F , HIRF830 , HIRF830F , HIRF840 .

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