HIRF630 Specs and Replacement
Type Designator: HIRF630
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 74 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 240 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO220AB
HIRF630 substitution
- MOSFET ⓘ Cross-Reference Search
HIRF630 datasheet
hirf630.pdf
Spec. No. MOS200401 HI-SINCERITY Issued Date 2004.04.01 Revised Date 2005.04.22 MICROELECTRONICS CORP. Page No. 1/6 HIRF630 Series Pin Assignment HIRF630 / HIRF630F Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code E Pin 1 Gate Pin 2 & Tab Drain Description Pin 3 Source This power MOSFET is designed for low voltage, high speed power switching applicati... See More ⇒
Detailed specifications: H50N03J, H6968CTS, H6968S, H8205, H8205A, H9435S, H9926S, H9926TS, IRFB4227, HIRF630F, HIRF730, HIRF730F, HIRF740, HIRF740F, HIRF830, HIRF830F, HIRF840
Keywords - HIRF630 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: AP2R803GS-HF | BSZ037N06LS5
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