IPS65R650CE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPS65R650CE
Código: 65S650CE
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 86 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 10.1 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3.5 V
Carga de la puerta (Qg): 23 nC
Tiempo de subida (tr): 8 nS
Conductancia de drenaje-sustrato (Cd): 30 pF
Resistencia entre drenaje y fuente RDS(on): 0.65 Ohm
Paquete / Cubierta: TO251
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IPS65R650CE Datasheet (PDF)
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isc N-Channel MOSFET Transistor IPS65R400CEFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
Otros transistores... NTP6411AN , NTP6412AN , NTP6413AN , NTR0202PL , NTR1P02 , NTR1P02LT1 , NTR2101P , NTR4003N , TK10A60D , NTR4170N , NTR4171P , NTR4501N , NTR4502P , NTR4503N , NTS2101P , NTS4001N , NTS4101P .
