All MOSFET. IPS65R650CE Datasheet

 

IPS65R650CE MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPS65R650CE
   Marking Code: 65S650CE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 86 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 10.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 23 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO251

 IPS65R650CE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPS65R650CE Datasheet (PDF)

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