IPS65R650CE Datasheet and Replacement
Type Designator: IPS65R650CE
Marking Code: 65S650CE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 86 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id| ⓘ - Maximum Drain Current: 10.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 23 nC
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 30 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: TO251
IPS65R650CE substitution
IPS65R650CE Datasheet (PDF)
ips65r650ce.pdf

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ips65r1k0ce.pdf

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ips65r950c6.pdf

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History: AP0603GM | IRF513



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