IPS65R650CE - описание и поиск аналогов

 

IPS65R650CE. Аналоги и основные параметры

Наименование производителя: IPS65R650CE

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 86 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 10.1 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 8 ns

Cossⓘ - Выходная емкость: 30 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.65 Ohm

Тип корпуса: TO251

Аналог (замена) для IPS65R650CE

- подборⓘ MOSFET транзистора по параметрам

 

IPS65R650CE даташит

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IPS65R650CE

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IPD65R400CE, IPS65R400CE MOSFET DPAK IPAK SL 650V CoolMOS CE Power Transistor tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE series combines the 1 3 experience of the leading SJ MOSFET supplier with high class innovation. The resulting de

 8.2. Size:1733K  infineon
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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 650V CoolMOS CE Power Transistor IPS65R1K0CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS CE Power Transistor IPS65R1K0CE IPAK SL 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V 650V CoolMOS C6 Power Transistor IPS65R950C6 Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPS65R950C6 IPAK SL 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pio

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