IPS65R650CE Todos los transistores

 

IPS65R650CE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPS65R650CE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 86 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 30 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm
   Paquete / Cubierta: TO251
     - Selección de transistores por parámetros

 

IPS65R650CE Datasheet (PDF)

 ..1. Size:979K  1
ips65r650ce.pdf pdf_icon

IPS65R650CE

IPS65R650CEMOSFETIPAK SL650V CoolMOS CE Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting h

 8.1. Size:1094K  infineon
ipd65r400ce ips65r400ce.pdf pdf_icon

IPS65R650CE

IPD65R400CE, IPS65R400CEMOSFETDPAK IPAK SL650V CoolMOS CE Power TransistortabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE series combines the 13experience of the leading SJ MOSFET supplier with high class innovation.The resulting de

 8.2. Size:1733K  infineon
ips65r1k0ce.pdf pdf_icon

IPS65R650CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE650V CoolMOS CE Power TransistorIPS65R1K0CEData SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS CE Power TransistorIPS65R1K0CEIPAK SL1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

 8.3. Size:651K  infineon
ips65r950c6.pdf pdf_icon

IPS65R650CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPS65R950C6 Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPS65R950C6IPAK SL1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the superjunction (SJ) principle and pio

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: BUK7616-55A | CSD85312Q3E | FTK5N80DD | AP98T03GP-HF | MDU1532SURH

 

 
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