IPS65R650CE Todos los transistores

 

IPS65R650CE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPS65R650CE

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 86 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 30 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm

Encapsulados: TO251

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IPS65R650CE datasheet

 ..1. Size:979K  1
ips65r650ce.pdf pdf_icon

IPS65R650CE

IPS65R650CE MOSFET IPAK SL 650V CoolMOS CE Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting h

 8.1. Size:1094K  infineon
ipd65r400ce ips65r400ce.pdf pdf_icon

IPS65R650CE

IPD65R400CE, IPS65R400CE MOSFET DPAK IPAK SL 650V CoolMOS CE Power Transistor tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE series combines the 1 3 experience of the leading SJ MOSFET supplier with high class innovation. The resulting de

 8.2. Size:1733K  infineon
ips65r1k0ce.pdf pdf_icon

IPS65R650CE

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 650V CoolMOS CE Power Transistor IPS65R1K0CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS CE Power Transistor IPS65R1K0CE IPAK SL 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and

 8.3. Size:651K  infineon
ips65r950c6.pdf pdf_icon

IPS65R650CE

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V 650V CoolMOS C6 Power Transistor IPS65R950C6 Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPS65R950C6 IPAK SL 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pio

Otros transistores... NTP6411AN , NTP6412AN , NTP6413AN , NTR0202PL , NTR1P02 , NTR1P02LT1 , NTR2101P , NTR4003N , 4435 , NTR4170N , NTR4171P , NTR4501N , NTR4502P , NTR4503N , NTS2101P , NTS4001N , NTS4101P .

History: BLF7G27L-135 | CS10N80V

 

 

 

 

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