IRF1104 MOSFET Datasheet: N-Ch, 40V, 100A. Full specification with pinout and replacement list

IRF1104 Specs and Replacement

   Type Designator: IRF1104
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 170 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 114 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO220AB

IRF1104 substitution

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IRF1104 datasheet

..1. Size:101K international rectifier
irf1104.pdf pdf_icon

PD- 9.1724A IRF1104 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.009 Fast Switching G Fully Avalanche Rated ID = 100A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-... See More ⇒

..2. Size:185K international rectifier
irf1104pbf.pdf pdf_icon

PD - 94967 IRF1104PbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 40V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 0.009 l Fast Switching G l Fully Avalanche Rated ID = 100A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme... See More ⇒

..3. Size:245K inchange semiconductor
irf1104.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1104 IIRF1104 FEATURES Static drain-source on-resistance RDS(on) 9.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM ... See More ⇒

0.1. Size:208K international rectifier
irf1104l.pdf pdf_icon

PD -91845 IRF1104S/L HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Surface Mount (IRF1104S) Low-profile through-hole (IRF1104L) RDS(on) = 0.009 175 C Operating Temperature G Fast Switching ID = 100A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique... See More ⇒