All MOSFET. IRF1104 Datasheet

 

IRF1104 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF1104

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 170 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 100 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 62 nC

Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm

Package: TO220AB

IRF1104 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF1104 Datasheet (PDF)

0.1. irf1104s.pdf Size:208K _international_rectifier

IRF1104
IRF1104

PD -91845 IRF1104S/L HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Surface Mount (IRF1104S) Low-profile through-hole (IRF1104L) RDS(on) = 0.009Ω 175°C Operating Temperature G Fast Switching ID = 100A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique

0.2. irf1104pbf.pdf Size:185K _international_rectifier

IRF1104
IRF1104

PD - 94967 IRF1104PbF HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 40V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 0.009Ω l Fast Switching G l Fully Avalanche Rated ID = 100A… l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme

 0.3. irf1104.pdf Size:101K _international_rectifier

IRF1104
IRF1104

PD- 9.1724A IRF1104 PRELIMINARY HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.009Ω Fast Switching G Fully Avalanche Rated ID = 100A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-

0.4. irf1104.pdf Size:245K _inchange_semiconductor

IRF1104
IRF1104

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1104, IIRF1104 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤9.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM

Datasheet: IRF044 , IRF054 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL , IRF1010NS , IRFP260 , IRF130 , IRF1310N , IRF1310NL , IRF1310NS , IRF140 , IRF1404 , IRF141 , IRF142 .

 

 
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