IRF1104 Todos los transistores

 

IRF1104 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF1104

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Máxima disipación de potencia (Pd): 170 W

Voltaje máximo drenador - fuente |Vds|: 40 V

Voltaje máximo fuente - puerta |Vgs|: 20 V

Corriente continua de drenaje |Id|: 100 A

Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V

Carga de la puerta (Qg): 93(max) nC

Tiempo de subida (tr): 114 nS

Conductancia de drenaje-sustrato (Cd): 1100 pF

Resistencia entre drenaje y fuente RDS(on): 0.009 Ohm

Paquete / Cubierta: TO220AB

Búsqueda de reemplazo de MOSFET IRF1104

 

IRF1104 Datasheet (PDF)

 ..1. Size:185K  international rectifier
irf1104pbf.pdf

IRF1104 IRF1104

PD - 94967IRF1104PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 40Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.009l Fast SwitchingGl Fully Avalanche RatedID = 100Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve extreme

 ..2. Size:101K  international rectifier
irf1104.pdf

IRF1104 IRF1104

PD- 9.1724AIRF1104PRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.009 Fast SwitchingG Fully Avalanche RatedID = 100A SDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve extremely low on-

 ..3. Size:185K  infineon
irf1104pbf.pdf

IRF1104 IRF1104

PD - 94967IRF1104PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 40Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.009l Fast SwitchingGl Fully Avalanche RatedID = 100Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve extreme

 ..4. Size:245K  inchange semiconductor
irf1104.pdf

IRF1104 IRF1104

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1104 IIRF1104FEATURESStatic drain-source on-resistance:RDS(on) 9.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

 0.1. Size:208K  international rectifier
irf1104l.pdf

IRF1104 IRF1104

PD -91845IRF1104S/LHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V Surface Mount (IRF1104S) Low-profile through-hole (IRF1104L)RDS(on) = 0.009 175C Operating TemperatureG Fast SwitchingID = 100A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing technique

 0.2. Size:208K  international rectifier
irf1104s.pdf

IRF1104 IRF1104

PD -91845IRF1104S/LHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V Surface Mount (IRF1104S) Low-profile through-hole (IRF1104L)RDS(on) = 0.009 175C Operating TemperatureG Fast SwitchingID = 100A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing technique

Otros transistores... IRF044 , IRF054 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL , IRF1010NS , IRFP250 , IRF130 , IRF1310N , IRF1310NL , IRF1310NS , IRF140 , IRF1404 , IRF141 , IRF142 .

 

 
Back to Top

 


IRF1104
  IRF1104
  IRF1104
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: WMU080N10HG2 | WMT07N10TS | WMT07N06TS | WMT07N03T1 | WMT05N12TS | WMT05N10T1 | WMT04P10TS | WMT04P06TS | WMT04N10TS | WMS690N15HG2 | WMS240N10LG2 | WMS17P03TS | WMS175N10LG4 | WMS175N10HG4 | WMS175DN10LG4 | WMS15P02T1

 

 

 
Back to Top