IRF1104 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF1104

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 170 W

Tensión drenaje-fuente |Vds|: 40 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 100 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Carga de compuerta (Qg): 93(max) nC

Tiempo de elevación (tr): 114 nS

Conductancia de drenaje-sustrato (Cd): 1100 pF

Resistencia drenaje-fuente RDS(on): 0.009 Ohm

Paquete / Caja (carcasa): TO220AB

Búsqueda de reemplazo de MOSFET IRF1104

IRF1104 Datasheet (PDF)

..1. irf1104pbf.pdf Size:185K _international_rectifier

PD - 94967IRF1104PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 40Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.009l Fast SwitchingGl Fully Avalanche RatedID = 100Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve extreme

..2. irf1104.pdf Size:101K _international_rectifier

PD- 9.1724AIRF1104PRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.009 Fast SwitchingG Fully Avalanche RatedID = 100A SDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve extremely low on-

..3. irf1104pbf.pdf Size:185K _infineon

..4. irf1104.pdf Size:245K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1104 IIRF1104FEATURESStatic drain-source on-resistance:RDS(on) 9.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

0.1. irf1104l.pdf Size:208K _international_rectifier

PD -91845IRF1104S/LHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V Surface Mount (IRF1104S) Low-profile through-hole (IRF1104L)RDS(on) = 0.009 175C Operating TemperatureG Fast SwitchingID = 100A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing technique

0.2. irf1104s.pdf Size:208K _international_rectifier

Otros transistores... IRF044 , IRF054 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL , IRF1010NS , IRFB4227 , IRF130 , IRF1310N , IRF1310NL , IRF1310NS , IRF140 , IRF1404 , IRF141 , IRF142 .

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