IGBT Datasheet



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IGW25T120
  IGW25T120
  IGW25T120
  IGW25T120
 
IGW25T120
  IGW25T120
  IGW25T120
  IGW25T120
 
 
List
10N40C1D ..APT15GT60KR
APT20GF120BR ..FGH30N60LSD
FGH40N60SF ..GT25G102
GT25H101 ..HGT5A40N60A4
HGTD10N40F1 ..HGTP1N120CND
HGTP20N35G3VL ..IKD15N60R
IKI04N60T ..IRG4PC40K
IRG4PC40KD ..IRGB8B60K
IRGBC20S ..IXBT12N300
IXBT16N170 ..IXGF32N170
IXGF36N300 ..IXGH32N60AU1
IXGH32N60B ..IXGK60N60
IXGK60N60B2D1 ..IXGR35N120C
IXGR39N60B ..IXGT50N60C2
IXGT50N90B2 ..IXSK40N60BD1
IXSK40N60CD1 ..MDI400-12E4
MDI550-12A4 ..MIXA20WB1200TML
MIXA30W1200TED ..MWI30-06A7T
MWI30-12E6K ..RJH60F7DPQ-A0
RJH60M0DPQ-A0 ..SGP20N60RUF
SGP23N60UF ..SKM22GD123D
SKM300GA123D ..SMC7G50US60
SMC7G5US120 ..STGP19NC60WD
STGP20NC60V ..VWI35-06P1
 
IGW25T120 All IGBT Data Sheet. Parameters and Characteristics. IGBT Cross Reference Database.
 

IGW25T120 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: IGW25T120

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 190W

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 2.2V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 50A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO247

Equivalent transistors for IGW25T120 - Cross-Reference Search

IGW25T120 PDF doc:

1.1. igw25t120_rev2_4g.pdf Size:349K _infineon

IGW25T120
IGW25T120
IGW25T120 TrenchStop® Series Low Loss IGBT in TrenchStop® and Fieldstop technology C • Short circuit withstand time – 10µs • Designed for : - Frequency Converters G E - Uninterrupted Power Supply • TrenchStop® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior • NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) PG-TO-247-3 • Low EMI • Low Gate Charge • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Package IGW25T120 1200V 25A 1.7V G25T120 PG-TO-247-3 150°C Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current IC A 50 TC = 25°C 25 TC = 100°C Pulsed collector current, tp

5.1. igw25n120h3_.pdf Size:901K _infineon

IGW25T120
IGW25T120
IGBT High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120 IGW25N120H3 1200V high speed switching series third generation Data sheet Industrial & Multimarket IGW25N120H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120 Features: C TRENCHSTOPTM technology offering • best in class switching performance: less than 500µJ total switching losses achievable • very low V CEsat G • low EMI E • maximum junction temperature 175°C • qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ Applications: • solar inverters • uninterruptible power supplies • welding converters • converters with high switching frequency Key Performance and Package Parameters Type V†S I† V†SUEU, TYI=25°C TYINEa Marking Package Typ

See also transistors datasheet: IGB20N60H3 , IGW20N60H3 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , IGW30N100T , IGW08T120 , IGW15T120 , IRG4PF50W , IGW60T120 , IGD06N60T , IGB15N60T , IGB30N60T , IGP30N60T , IGW30N60T , IGB50N60T , IGW50N60T .

Keywords

 IGW25T120 Datasheet  IGW25T120 Datenblatt  IGW25T120 RoHS  IGW25T120 Distributor
 IGW25T120 Application Notes  IGW25T120 Component  IGW25T120 Circuit  IGW25T120 Schematic
 IGW25T120 Equivalent  IGW25T120 Cross Reference  IGW25T120 Data Sheet  IGW25T120 Fiche Technique

 

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