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IGW25T120 IGBT (IC) Datasheet. Cross Reference Search. IGW25T120 Equivalent

Type Designator: IGW25T120

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 190W

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 2.2V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 50A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO247

IGW25T120 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IGW25T120 PDF doc:

1.1. igw25t120_rev2_4g.pdf Size:349K _infineon

IGW25T120
IGW25T120

IGW25T120 TrenchStop® Series Low Loss IGBT in TrenchStop® and Fieldstop technology C • Short circuit withstand time – 10µs • Designed for : - Frequency Converters G E - Uninterrupted Power Supply • TrenchStop® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior • NPT technology offer

5.1. igw25n120h3_.pdf Size:901K _infineon

IGW25T120
IGW25T120

IGBT High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120 IGW25N120H3 1200V high speed switching series third generation Data sheet Industrial & Multimarket IGW25N120H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120 Features: C TRENCHST

See also transistors datasheet: IGB20N60H3 , IGW20N60H3 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , IGW30N100T , IGW08T120 , IGW15T120 , IRG4PF50W , IGW60T120 , IGD06N60T , IGB15N60T , IGB30N60T(G30T60) , IGP30N60T , IGW30N60T(G30T60) , IGB50N60T , IGW50N60T .

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