IGBT Datasheet

Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
10N40C1D ..APT15GP90K
APT60GT60JR ..CT20TM-8
CT20VM-8 ..G7N60C
G7N60C3 ..GT60M102
GT60M103 ..HGTD8P50G1S
HGTD8P50G1S9A ..IGA03N120H2
IGA30N60H3 ..IKW40N120T2
IRGP4072D ..IXDP20N60B
IXDP20N60BD1 ..IXGH16N170A
IXGH16N170AH1 ..IXGH40N30B
IXGH40N30BD1 ..IXGN400N60B3
IXGN50N120C3H1 ..IXGR60N60C2D1
IXGR60N60C3C1 ..IXGX35N120C
IXGX35N120CD1 ..IXSR40N60BD1
IXSR40N60CD1 ..MGW12N120D
MIXA80WB1200TEH ..NGB8202N
RJP60F5DPM ..SGW02N120
SGW10N60A ..SKM500GA123D
SKM500GA123S ..STGB18N40LZ
STGW30NC60KD ..VWI35-06P1
IGW25T120 All IGBT Data Sheet. Parameters and Characteristics. IGBT Cross Reference Database.

IGW25T120 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: IGW25T120

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 190W

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 2.2V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 50A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO247

Equivalent transistors for IGW25T120 - Cross-Reference Search

IGW25T120 PDF doc:

1.1. igw25t120_rev2_4g.pdf Size:349K _infineon

IGW25T120 TrenchStop® Series Low Loss IGBT in TrenchStop® and Fieldstop technology C • Short circuit withstand time – 10µs • Designed for : - Frequency Converters G E - Uninterrupted Power Supply • TrenchStop® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior • NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) PG-TO-247-3 • Low EMI • Low Gate Charge • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Package IGW25T120 1200V 25A 1.7V G25T120 PG-TO-247-3 150°C Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current IC A 50 TC = 25°C 25 TC = 100°C Pulsed collector current, tp

5.1. igw25n120h3_.pdf Size:901K _infineon

IGBT High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120 IGW25N120H3 1200V high speed switching series third generation Data sheet Industrial & Multimarket IGW25N120H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120 Features: C TRENCHSTOPTM technology offering • best in class switching performance: less than 500µJ total switching losses achievable • very low V CEsat G • low EMI E • maximum junction temperature 175°C • qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ Applications: • solar inverters • uninterruptible power supplies • welding converters • converters with high switching frequency Key Performance and Package Parameters Type V†S I† V†SUEU, TYI=25°C TYINEa Marking Package Typ

See also transistors datasheet: IGB20N60H3 , IGW20N60H3 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , IGW30N100T , IGW08T120 , IGW15T120 , IRG4PF50W , IGW60T120 , IGD06N60T , IGB15N60T , IGB30N60T , IGP30N60T , IGW30N60T , IGB50N60T , IGW50N60T .


 IGW25T120 Datasheet  IGW25T120 Datenblatt  IGW25T120 RoHS  IGW25T120 Distributor
 IGW25T120 Application Notes  IGW25T120 Component  IGW25T120 Circuit  IGW25T120 Schematic
 IGW25T120 Equivalent  IGW25T120 Cross Reference  IGW25T120 Data Sheet  IGW25T120 Fiche Technique


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