IGBT Datasheet

Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
10N40C1D ..APT50GF120LR
APT50GF60AR ..FGPF4533
FGPF4536 ..GT5G101
GT5G102 ..HGTD7N60B3S
HGTP7N60B3 ..IKW25T120
IKW30N100T ..IRG4PH30K
IRGP4066D-E ..IXDH35N60BD1
IXDN50N120AU1 ..IXGH15N120B2D1
IXGH15N120BD1 ..IXGH40N120B2D1
IXGH40N120C3 ..IXGN200N60B
IXGN200N60B3 ..IXGR55N120A3H1
IXGR60N60B2 ..IXGX320N60B3
IXGX32N170AH1 ..IXSP20N60B2D1
MGS05N60D ..MIXA80R1200VA
MIXA80W1200TED ..MWI75-12T8T
MWI80-12T6K ..RJP60D0DPK
SKM400GB124D ..STGB10NB60S
STGW25H120DF ..VWI35-06P1
IGW25T120 All IGBT Data Sheet. Parameters and Characteristics. IGBT Cross Reference Database.

IGW25T120 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: IGW25T120

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 190W

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 2.2V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 50A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO247

Equivalent transistors for IGW25T120

IGW25T120 PDF doc:

1.1. igw25t120_rev2_4g.pdf Size:349K _infineon

IGW25T120 TrenchStop® Series Low Loss IGBT in TrenchStop® and Fieldstop technology C • Short circuit withstand time – 10µs • Designed for : - Frequency Converters G E - Uninterrupted Power Supply • TrenchStop® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior • NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) PG-TO-247-3 • Low EMI • Low Gate Charge • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Package IGW25T120 1200V 25A 1.7V G25T120 PG-TO-247-3 150°C Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current IC A 50 TC = 25°C 25 TC = 100°C Pulsed collector current, tp

5.1. igw25n120h3_.pdf Size:901K _infineon

IGBT High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120 IGW25N120H3 1200V high speed switching series third generation Data sheet Industrial & Multimarket IGW25N120H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120 Features: C TRENCHSTOPTM technology offering • best in class switching performance: less than 500µJ total switching losses achievable • very low V CEsat G • low EMI E • maximum junction temperature 175°C • qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ Applications: • solar inverters • uninterruptible power supplies • welding converters • converters with high switching frequency Key Performance and Package Parameters Type V†S I† V†SUEU, TYI=25°C TYINEa Marking Package Typ

See also transistors datasheet: IGB20N60H3 , IGW20N60H3 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , IGW30N100T , IGW08T120 , IGW15T120 , IRG4PF50W , IGW60T120 , IGD06N60T , IGB15N60T , IGB30N60T , IGP30N60T , IGW30N60T , IGB50N60T , IGW50N60T .


 IGW25T120 Datasheet  IGW25T120 Datenblatt  IGW25T120 RoHS  IGW25T120 Distributor
 IGW25T120 Application Notes  IGW25T120 Component  IGW25T120 Circuit  IGW25T120 Schematic
 IGW25T120 Equivalent  IGW25T120 Cross Reference  IGW25T120 Data Sheet  IGW25T120 Fiche Technique

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