IGBT Datasheet



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IGW25T120
  IGW25T120
  IGW25T120
  IGW25T120
 
IGW25T120
  IGW25T120
  IGW25T120
  IGW25T120
 
 
List
10N40C1D ..APT15GP90K
APT15GT60BR ..APT60GT60BR
APT60GT60JR ..APTGF90TDU60P
APTGF90X60E3 ..AUIRGS14C40L
AUIRGS30B60K ..G12N60C3D
G12N60D1 ..GT50M101
GT50Q101 ..HGTD3N60B3S
HGTD3N60C3 ..HGTP3N60B3D
HGTP3N60C3 ..IKU15N60R
IKW03N120H2 ..IRG4PC50U
IRG4PC50UD ..IRGP30B120KD-E
IRGP30B60KD-E ..IXBX64N250
IXBX75N170 ..IXGH12N100A
IXGH12N100AU1 ..IXGH36N60B3
IXGH36N60B3C1 ..IXGM17N100
IXGM17N100A ..IXGR48N60C3D1
IXGR50N160H1 ..IXGX100N170
IXGX120N120A3 ..IXSN55N120A
IXSN55N120AU1 ..MGP15N43CL
MGP15N60U ..MIXA40W1200TML
MIXA40W1200TML ..MWI50-12E6K
MWI50-12E7 ..RJP30E2DPP-M0
RJP30E3DPP-M0 ..SGR6N60UF
SGS10N60RUF ..SKM400GA062D
SKM400GA123D ..SNG201025
SNG20620A ..STGPL6NC60D
STGPL6NC60DI ..VWI35-06P1
 
IGW25T120 All IGBT Data Sheet. Parameters and Characteristics. IGBT Cross Reference Database.
 

IGW25T120 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: IGW25T120

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 190W

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 2.2V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 50A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO247

Equivalent transistors for IGW25T120 - Cross-Reference Search

IGW25T120 PDF doc:

1.1. igw25t120_rev2_4g.pdf Size:349K _infineon

IGW25T120
IGW25T120
IGW25T120 TrenchStop® Series Low Loss IGBT in TrenchStop® and Fieldstop technology C • Short circuit withstand time – 10µs • Designed for : - Frequency Converters G E - Uninterrupted Power Supply • TrenchStop® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior • NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) PG-TO-247-3 • Low EMI • Low Gate Charge • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Package IGW25T120 1200V 25A 1.7V G25T120 PG-TO-247-3 150°C Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current IC A 50 TC = 25°C 25 TC = 100°C Pulsed collector current, tp

5.1. igw25n120h3_.pdf Size:901K _infineon

IGW25T120
IGW25T120
IGBT High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120 IGW25N120H3 1200V high speed switching series third generation Data sheet Industrial & Multimarket IGW25N120H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120 Features: C TRENCHSTOPTM technology offering • best in class switching performance: less than 500µJ total switching losses achievable • very low V CEsat G • low EMI E • maximum junction temperature 175°C • qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ Applications: • solar inverters • uninterruptible power supplies • welding converters • converters with high switching frequency Key Performance and Package Parameters Type V†S I† V†SUEU, TYI=25°C TYINEa Marking Package Typ

See also transistors datasheet: IGB20N60H3 , IGW20N60H3 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , IGW30N100T , IGW08T120 , IGW15T120 , IRG4PF50W , IGW60T120 , IGD06N60T , IGB15N60T , IGB30N60T , IGP30N60T , IGW30N60T , IGB50N60T , IGW50N60T .

Keywords

 IGW25T120 Datasheet  IGW25T120 Datenblatt  IGW25T120 RoHS  IGW25T120 Distributor
 IGW25T120 Application Notes  IGW25T120 Component  IGW25T120 Circuit  IGW25T120 Schematic
 IGW25T120 Equivalent  IGW25T120 Cross Reference  IGW25T120 Data Sheet  IGW25T120 Fiche Technique

 

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