Справочник IGBT. IGW25T120

 

IGW25T120 Даташит. Аналоги. Параметры и характеристики.


   Наименование: IGW25T120
   Тип транзистора: IGBT
   Маркировка: G25T120
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 190 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 50 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tj ⓘ - Максимальная температура перехода: 150 ℃
   tr ⓘ - Время нарастания типовое: 30 nS
   Coesⓘ - Выходная емкость, типовая: 96 pF
   Qg ⓘ - Общий заряд затвора, typ: 155 nC
   Тип корпуса: TO247
 

 Аналог (замена) для IGW25T120

   - подбор ⓘ IGBT транзистора по параметрам

 

IGW25T120 Datasheet (PDF)

 ..1. Size:349K  infineon
 igw25t120.pdf pdf_icon

IGW25T120

IGW25T120 TrenchStop Series Low Loss IGBT in TrenchStop and Fieldstop technology C Short circuit withstand time 10s Designed for : - Frequency Converters GE - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT

 ..2. Size:349K  infineon
 igw25t120 rev2 4g.pdf pdf_icon

IGW25T120

IGW25T120 TrenchStop Series Low Loss IGBT in TrenchStop and Fieldstop technology C Short circuit withstand time 10s Designed for : - Frequency Converters GE - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT

 9.1. Size:2033K  infineon
 igw25n120h3.pdf pdf_icon

IGW25T120

IGBTHigh speed IGBT in Trench and Fieldstop technologyrecommended in combination with SiC Diode IDH15S120IGW25N120H31200V high speed switching series third generationData sheetIndustrial Power ControlIGW25N120H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyrecommended in combination with SiC Diode IDH15S120Features: CTRENC

 9.2. Size:901K  infineon
 igw25n120h3 .pdf pdf_icon

IGW25T120

IGBTHigh speed IGBT in Trench and Fieldstop technologyrecommended in combination with SiC Diode IDH15S120IGW25N120H31200V high speed switching series third generationData sheetIndustrial & MultimarketIGW25N120H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyrecommended in combination with SiC Diode IDH15S120Features: CTRENC

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... IGB20N60H3 , IGW20N60H3 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , IGW30N100T , IGW08T120 , IGW15T120 , TGAN60N60F2DS , IGW60T120 , IGD06N60T , IGB15N60T , SIW75N65G2L2A , IGP30N60T , BSM50GAL120DN2 , IGB50N60T , IGW50N60T .

History: GT20D101Y

 

 
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